Silicon carbide materials have prospect in numerous sectors, for instance, high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, next-generation displays, etc. From the application point of view, the applications of silicon carbide materials can be divided into three categories, low voltage, medium voltage, and high voltage.
In the low voltage field, main applications locate in consumer electronics, like PFC and power supply. To give an example, Xiaomi and Huawei have started to utilize gallium nitride devices in their fast chargers.
In the medium voltage field, the applications are mainly in automotive electronics, rail transit and higher voltage power grids (power grid with voltage over 3300V). Tesla was one of the first automotive manufacturers to adapt silicon carbide devices, which it used for its model 3.
Diodes and MOSFETs products of silicon carbide got developed very maturely and are now equipped and applied in the low and medium voltage fields.
For the high voltage field, silicon carbide has its own eminent characteristics, even though a mature product has yet to be launched. The world is now in the stage of researching and developing for this field.
The best application scenario of silicon carbide is electric vehicles. Toyotas electric drive module (the key part of electric vehicles) reduces the size of silicon carbide devices by 50% or more compared to silicon-based IGBTs. Additionally, the energy density of silicon carbide is twice as much as that of silicon-based IGBTs. This has also attracted several manufacturers to opt for silicon carbide, offering them more space to fit in other components due to optimized layout of components.
There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness, which gives the material many advantages in high speed, high temperature and/or high voltage applications. Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well, improving its electrical conductivity and ultimately miniaturization.
Silicon carbide substrates also have a low coefficient for thermal expansion, meaning that it does not change significantly in size or shape as it heats up or cools down. They have the ability to change temperatures rapidly without breaking or cracking, and are highly resistant to thermal shock, giving them a clear advantage when fabricating devices. On top of this, they are a very durable substrate and do not react with acids, alkalis or molten salts at temperatures up to 800°C.
Its strength at high temperatures also allows silicon carbide substrates to safely operate at temperatures over 1600°C, making it suitable for virtually any high temperature application. These specifications - Polytype Crystal structure, Thermal conductivity (n-type; 0.020 Ω*cm), Lattice parameters, Single-Crystal 4H, supported diameters, Bandgap, Thermal conductivity (HPSI) and Mohs hardness - give silicon carbide wafers their considerable advantage over traditional bulk silicon substrates.
4H-SiC* and 6H-SiC** are both semiconductor material with a wide range of diameter, from 50.8mm (2") to 200mm (8inch). The type and dopant in each of them is N/Nitrogen/intrinsic/HPSI. For resistivity, 4H-SiC has a range of .015 - .028 ohm*cm, while 6H-SiC has more, which is >1E7 ohm*cm. As for their overall thickness, both have 250um - 15,000um or 15mm. No matter which type of SiC, surface finish applied to both types are single or double side polished. The stacking sequence of them is ABCB (4H-SiC*) and ABCACB (6H-SiC**). The dielectric constants are 9.6 and 9.66 for 4H-SiC* and 6H-SiC** respectively, while the electron mobility of 4H-SiC* is 800 cm2/V*S and that of 6H-SiC** is 400 cm2/V*S. Thanks for their common properties, their density are the same as 3.21 · 103 kg/m3.
ZMSH SIC010 SiC Substrate is an ideal choice for custom size sic chips, custom size plates, 1x1cm, 0.5x0.5mm to 5x5mm, with high breakdown voltage of 5.5 MV/cm, excellent surface flatness of λfirstname.lastname@example.org, good tensile strength of >400MPa, monocrystal sic substrate, ROHS certification and competitive prices. It's widely used in a variety of applications, such as semiconductor, electronics, optoelectronic, LED, etc. Its excellent properties make it the ideal choice for many industries.
ZMSH SIC010 SiC Substrate offers superior performance and reliability, with an unbeatable price. It is made of high quality monocrystal SiC material, and has excellent electrical and thermal performance, making it an ideal choice for various industries. It is also RoHS certified, which ensures safety and reliability. Its large size can be customized to meet customer's needs.
ZMSH SIC010 SiC Substrate is the perfect choice for those who are looking for a reliable and cost-effective solution for their application. With a minimum order quantity of 10 pieces, it is available with competitive prices and fast delivery time of 30 days. It also has an excellent supply capacity of 1000 pieces per month.
Brand Name: ZMSH
Model Number: SIC010
Place of Origin: CHINA
Minimum Order Quantity: 10pc
Price: by case
Packaging Details: Customzied plastic box
Delivery Time: In 30days
Payment Terms: T/T
Supply Ability: 1000pc/month
Surface Flatness: λemail@example.com
Material: SiC Monocrystal
Breakdown Voltage: 5.5 MV/cm
Compressive Strength: >1000MPa
Features: 10x10mm；5x5mm, customzied shape sic plates, 4h-semi HPSI sic wafer
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