4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer

4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer

Product Description:

The SiC Substrate also has a surface roughness of Ra<0.5nm, which is essential for applications that require high precision. This substrate is suitable for use in different industries, including electronics, aerospace, and automotive. The substrate has a tensile strength of >400MPa, making it highly durable and able to withstand high levels of stress.

The SiC Substrate has a density of 3.21 G/cm3, which is ideal for applications that require a lightweight material. The substrate is available in custom shapes and sizes. The substrate is also available in customzied shape sic plates, making it suitable for various applications.

SiC materials enable faster, smaller, lighter and more powerful electronic systems. Wolfspeed is committed to providing our customers with the materials needed to facilitate the rapid expansion and adoption of the technology within the industry.
Our materials enable devices that power Renewable Energy, Base Stations & Telecom, Traction, Industrial Motor Control, Automotive applications and Aerospace and Defense.

Features:

Applications:

The SiC substrate material has a thermal expansion coefficient of 4.5 X 10-6/K and is a high-performance substrate type. The surface flatness is λ/10@632.8nm, and the surface hardness is HV0.3>2500. The material used is SiC Monocrystal, which is a high-quality material that is known for its durability and strength.

These silicon carbide wafers are ideal for a variety of applications, including electronic devices, LED lighting, and power electronics. The substrate can also be used for sic laser cutting, where it is used as a cutting tool for precision cutting of materials. The substrate can be customized to fit specific shapes and sizes, making it a versatile product for a range of industries.

If you need customzied shape sic plates, ZMSH SIC010 is the perfect solution. With its high-quality material and precise cutting capabilities, the substrate can be tailored to meet your needs. Whether you need a small or large quantity, ZMSH SIC010 can provide you with the product you need at a competitive price.

Customization:

ZMSH SIC Substrate Product Customization Services:

• Brand Name: ZMSH
• Model Number: SIC010
• Place of Origin: CHINA
• Certification: rohs
• Minimum Order Quantity: 10pc
• Price: by case
• Delivery Time: 2-4 weeks
• Payment Terms: T/T
• Supply Ability: 1000pc/month
• Surface: Si-face CMP; C-face Mp;
• Available Sizes: 2 inch,3inch
• Density: 3.21 G/cm3

We offer customized size SiC wafer and SiC laser cutting services. Our silicon carbide wafers are of high quality and meet industry standards.

Popularization of science:

Silicon carbide (SiC) is touted as the next generation of wideband gap semiconductor materials that will serve as a key element in the substrate of metal-oxide-semiconductor devices used in electric vehicles, energy storage and renewable energy-related industries [1]. Special attention has been paid to the deployment of 4H-SiC for many years due to the large band opening (~ 3.26 eV), as well as the key characteristics of saturation drift velocity (2.7 × 107 cm/s), critical electric field (~ 3 MV/cm), and thermal conductivity (~ 4.9 W cm-1 K-1), which are high enough to be effective. Facilitates the development of equipment with high energy efficiency, high heat dissipation efficiency, high switching frequency, and can operate at high temperatures. In order for these SiC based MOS devices to operate under high pressure and high power conditions, a high quality passivation layer is critical, as silicon dioxide (SiO2) has been inherited into SiC based MOS devices as a passivation layer [4]. In fact, the use of A heat-grown SiO2 passivation layer on the SiC substrate, at 6 MV/cm, achieves a leakage current density of about 10-12 A/cm2 lower than that of the Si substrate. Although the SiO2/SiC structure exhibits promising MOS properties, the SiO2 dielectric constant (k = 3.90) that causes the SiO2 passivation layer to collapse prematurely before the SiC substrate seriously affects the corresponding MOS properties.