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4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer

SiC Substrate
2024-05-29
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#sic wafer #sic substrate #silicon carbide substrate
4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer Product Description: The SiC Substrate also has a surface roughness of Ra400MPa, making it highly durable and able to ... View More
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4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer
4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer
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