Send Message
SHANGHAI FAMOUS TRADE CO.,LTD
Mail: eric_wang@zmsh-materials.com TEL: 86-1580-1942596
Home > Products > SiC Substrate >
Silicon Carbide (SiC) Substrate Option For High Standard Industrial Applications
  • Silicon Carbide (SiC) Substrate Option For High Standard Industrial Applications
  • Silicon Carbide (SiC) Substrate Option For High Standard Industrial Applications
  • Silicon Carbide (SiC) Substrate Option For High Standard Industrial Applications

Silicon Carbide (SiC) Substrate Option For High Standard Industrial Applications

Place of Origin CHINA
Brand Name ZMSH
Model Number Silicon carbide (SiC) Substrate
Product Details
Compressive Strength:
>1000MPa
Substrate Type:
Silicon Carbide (SiC) Substrate
Surface Roughness:
Ra<0.5nm
Tensile Strength:
>400MPa
Density:
3.21 G/cm3
Material:
SiC Monocrystal
High Light: 

High Standard Industrial SiC Substrate

,

High Standard SiC Substrate

,

Industrial Applications SiC Substrate

Product Description

Silicon carbide (SiC) Substrate Option for High-Standard Industrial Applications

Product Description:

This product is dopant-free, making it ideal for a wide range of applications. Whether you're working on a research project or developing a new product, our SiC substrates can meet your needs. We offer custom-sized plates with customized shapes to fit your specific requirements. You can have peace of mind knowing that our SiC substrates will exceed your expectations.

Our SiC substrates have a thermal conductivity of 4.9 W/mK, making them highly efficient at dissipating heat. This is an important factor in semiconductor production, as overheating can damage delicate components. With our SiC substrates, you can be sure that your devices will remain cool even under heavy use.

The surface roughness of our SiC substrates is Ra<0.5nm, ensuring a smooth and even surface. This is particularly important in semiconductor manufacturing, where even the smallest imperfections can negatively impact device performance. With our SiC substrates, you can be sure that your devices will be of the highest quality.

Our SiC substrates have a thermal expansion coefficient of 4.5 X 10-6/K. This makes them highly stable and resistant to changes in temperature. With our SiC substrates, you can be sure that your devices will maintain their performance even in extreme conditions.

At our company, we understand that every project is unique. That's why we offer custom-sized plates with customized shapes to fit your specific requirements. Whether you need a small, rectangular plate or a large, irregularly shaped one, we can deliver the SiC substrate you need.

In conclusion, our SiC Substrate product is the ideal choice for anyone looking for high-performance, reliable silicon carbide wafers. With a tensile strength of over 400MPa, dopant-free composition, thermal conductivity of 4.9 W/mK, surface roughness of Ra<0.5nm, and thermal expansion coefficient of 4.5 X 10-6/K, our SiC substrates deliver top-notch performance in even the most demanding applications. Contact us today to learn more about our custom-sized plates and customized shapes.

 

Features:

  • Product Name: SiC Substrate
  • Surface:DSP
  • Silicon Carbide Wafers: 4H-N SIC Wafers,Si-face CMP,C-face Mp
  • Surface Roughness: Ra < 0.5nm
  • Resistivity:0.015~0.028ohm.cm,Or >1E7ohm.cm
  • Thermal Conductivity: 4.9 W/mK
  • Surface Flatness: λ/10@632.8nm
 

Applications:

The dielectric constant of ZMSH SIC010 is 9.7, and the compressive strength is greater than 1000MPa. The thermal expansion coefficient is 4.5 X 10-6/K. These attributes make it a reliable product for various applications.

The ZMSH SIC010 can be used in different occasions and scenarios. It is suitable for sic laser cutting, which is a process that uses a laser to cut various materials, including SiC substrates. This product is perfect for this application due to its high compressive strength and thermal expansion coefficient.

The size of this product can be customized according to the customer's requirements. It can be used in the manufacturing of 1x1cm or 0.5x0.5mm SiC substrates. In addition, 4h-semi HPSI sic wafer can be manufactured using ZMSH SIC010. This type of wafer has a high purity level and is used in the production of electronic devices such as power devices, sensors, and LEDs.

 

Customization:

<0.5nm. We offer customized size sic chips to meet your specific needs. Our 4H-N SIC wafers are also available for customization. Contact us today to discuss your customization requirements.

Packing and Shipping:

Product Packaging:

  • The SiC substrate will be packaged in a sturdy cardboard box to ensure safe transport.
  • The substrate will be placed in a plastic container to prevent any damage during shipping.
  • The container will be labeled with the product name and code, as well as handling instructions.

Shipping:

  • The SiC substrate will be shipped via a reliable courier service to ensure timely delivery.
  • The substrate will be properly labeled with all necessary shipping information, including the recipient's address and contact information.
  • Any necessary customs documentation will be included with the shipment.
  • Customers will be provided with a tracking number to monitor the progress of their shipment.

Contact Us at Any Time

86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us