Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

 
4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P-type conductivity is obtained by a specific doping process (such as doping aluminum and other elements). Such substrates typically have high doping concentrations and low resistivity, making them ideal for manufacturing high-power devices. An axis of 0° usually refers to the fact that a particular crystal direction or positioning edge of the substrate has an Angle of 0° from a reference direction (such as the substrate plane), which helps to ensure the consistency and reliability of the device in subsequent manufacturing processes.
 
 
 

Features:

• Wide band gap: Type 4H-P silicon carbide has a wide band gap of about 3.26 eV, which enables it to work stably in high temperature and high voltage environments.

• High thermal conductivity: With a thermal conductivity of about 4.9W /m·K, much higher than silicon materials, it can effectively direct and dissipate heat, suitable for high power density applications.

• Low resistivity: P-type doped silicon carbide has a low resistivity, suitable for the construction of PN junction, so as to meet the needs of high power devices.

• High hardness and mechanical strength: Silicon carbide materials have very high mechanical strength and toughness for applications under harsh conditions.

• High breakdown voltage: Able to withstand higher voltages, helping to reduce device size and improve energy efficiency.

Technical Parameter

Applications:

Customization:

ZMSH provides a full range of silicon carbide substrate 4H-P (axis 0°) services, including precision custom processing to meet customer specific needs, the use of professional logistics channels to ensure product safety and on-time delivery, and the use of shock-proof, moisture-proof packaging materials carefully packaged and delivered to ensure high-quality delivery of silicon carbide substrates.