8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

As a core material supplier in China's SiC industry chain, ZMSH independently develops 8-inch SiC epitaxial wafers based on a mature large-diameter wafer growth technology platform. Utilizing Chemical Vapor Deposition (CVD), a uniform single-crystal film is formed on our high-purity SiC substrate. Key features include:

• Epitaxial layer thickness: 5-20μm (±3% uniformity)
• Doping concentration deviation: <5%
• Surface killer defect density: <0.5/cm²
• Low background concentration: <1×10¹⁴ cm⁻³
• BPD conversion efficiency: >99%

Compared to traditional 6-inch wafers, the 8-inch wafer increases usable area by 78%, reducing unit device costs by ~30% through automated production, making it ideal for EVs, industrial power supplies, and other large-scale applications.

Product specifications of 8inch SiC epitaxial wafer

Key features of 8inch SiC epitaxial wafer

1. Precision Process Control

• Closed-loop gas flow & real-time temperature monitoring enable nanoscale thickness/doping control, 8inch SiC epitaxial wafer supporting 600-3300V device designs.

2. Ultra-Low Defect Density

• Surface defects <0.2/cm², dislocation density ~10³ cm⁻³, ensuring <1% performance degradation after 100k thermal cycles.

3. Material Compatibility

• Optimized for 4H-SiC, 8inch SiC epitaxial wafer is customizable n-type/semi-insulating layers, meeting stringent requirements for R_ON (<2 mΩ·cm²) and breakdown strength (>3 MV/cm).

4. Environmental Stability

• Corrosion-resistant passivation maintains <0.5% electrical drift at 85°C/85% RH for 1000h.