SiC Sintering Furnace – High-Temperature Carbonization and Uniform Bonding Solution

SiC Sintering Furnace – High-Temperature Carbonization and Uniform Bonding Solution

Product Overview

The SiC Sintering Furnace is designed for high-temperature sintering and carbonization of wafers, SiC seeds, graphite paper, and graphite plates. When paired with the SiC Fully Automatic Spray Bonding Machine, it ensures bubble-free, uniformly pressed, high-precision SiC bonded products.

The furnace allows adjustable temperature, pressure, and sintering time, guaranteeing complete adhesive carbonization and stable chemical bonding. It is ideal for high-temperature, high-strength, and corrosive environments, providing a stable, high-yield (>90%) production process for SiC seed bonding, semiconductor wafer preparation, and high-precision material bonding.

Core Technology

1. High-Temperature Sintering and Carbonization

   • Bonded wafers, SiC seeds, graphite paper, and graphite plates undergo controlled high-temperature treatment.

   • Adhesive layers are fully carbonized and cured, forming a stable chemical bond.

2. Uniform Pressing

   • Adjustable pressure ensures even bonding across the interface, preventing local warping or voids.

   • Vacuum-assisted and bubble detection features achieve bubble-free sintering.

3. Programmable Process Parameters

   • Temperature, pressure, ramp-up/ramp-down profiles, and dwell time are fully programmable.

   • Adapts to different material characteristics and process requirements, ensuring consistent bonding strength and reliability.

System Features

• High-Precision Temperature Control: Uniform furnace temperature for consistent bonding results.

• Adjustable Pressure System: Ensures uniform interface compression.

• Vacuum Assistance: Removes air bubbles for defect-free bonding.

• Programmable Process Control: Automatic ramp-up, dwell, and cool-down cycles, with multiple stored recipes.

• Modular Design: Easy maintenance and future expandability.

• Safety Features: Over-temperature and over-pressure protection, operation interlocks.

Technical Specifications

Typical Applications

• SiC Seed Bonding: High-temperature sintering and carbonization for strong and uniform bonding.

• Semiconductor Wafer Preparation: Sintering single or multi-crystal SiC wafers.

• High-Temperature, Corrosion-Resistant Materials: High-performance ceramics and graphite-based composites.

• R&D and Pilot Production: Small-batch, high-precision material sintering.

Key Advantages

• High Yield: When combined with the automated spray bonding machine, bonding yield exceeds 90%.

• High Stability: Adjustable temperature, pressure, and vacuum ensure consistent sintering results.

• High Reliability: Key components meet international standards for long-term stable operation.

• Expandable: Modular design allows multi-wafers or larger wafer sizes.

• User-Friendly Operation: Programmable interface automates the entire sintering cycle.

FAQ – Frequently Asked Questions

Q1: What materials can the SiC Sintering Furnace process?
A1: Wafers, SiC seeds, graphite paper, graphite plates, and other high-temperature, corrosion-resistant materials.

Q2: Are temperature and pressure adjustable?
A2: Yes. Temperature ranges from 100–1600 °C and pressure from 0–5 MPa. Both are fully adjustable per material and process requirements.

Q3: How is bubble-free sintering ensured?
A3: The furnace integrates vacuum-assisted evacuation and uniform pressing, guaranteeing bubble-free and complete bonding.

Q4: Can multiple wafers be processed at once?
A4: Yes. The chamber can be customized for single or multiple wafers.

Q5: What is the typical sintering cycle time?
A5: Adjustable, generally 30–180 minutes, depending on material thickness and process settings.