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Created with Pixso. SiC Precision Bonding Machine for Wafers, Graphite Paper, and SiC Seeds

SiC Precision Bonding Machine for Wafers, Graphite Paper, and SiC Seeds

Brand Name: ZMSH
MOQ: 1
Delivery Time: 2-4WEEKS
Payment Terms: T/T
Detail Information
Place of Origin:
SHANGHAI,CHINA
Maximum Substrate Size:
≤12 Inches
Vacuum Level:
≤10⁻² Pa
Pressure Range:
0–5 MPa
Temperature Range:
Ambient – 300 °C
Cycle Time:
5–60 Min
Power Supply:
220V / 380V
Product Description

SiC Precision Bonding Machine for Wafers, Graphite Paper, and SiC Seeds


Product Overview


The SiC Bonding Machine is a high-precision system designed to bond wafers, SiC seeds, graphite paper, and graphite plates. It provides accurate center alignment, vacuum-assisted bonding, and adjustable pressure, ensuring bubble-free, uniform, and stable bonding.

This machine is ideal for semiconductor manufacturing, SiC seed preparation, high-temperature ceramics, and research or pilot-scale applications. It offers a reliable, reproducible process for materials that require high precision and integrity.


SiC Precision Bonding Machine for Wafers, Graphite Paper, and SiC Seeds 0


Key Advantages


  • High Bonding Precision: Accurate alignment guarantees uniform bonding across the substrate.

  • Bubble-Free Bonding: Vacuum-assisted bonding removes trapped air and prevents defects.

  • Adjustable Pressure: Ensures uniform compression for consistent bonding quality.

  • Material Compatibility: Supports wafers, SiC seeds, graphite paper, and graphite plates.

  • Stable and Reproducible Process: Ideal for small-batch or pilot-scale production.

  • User-Friendly Operation: Simple interface for easy control and process monitoring.

SiC Precision Bonding Machine for Wafers, Graphite Paper, and SiC Seeds 1


System Features


  • Center Alignment Mechanism: Precisely positions wafers, SiC seeds, and graphite plates.

  • Vacuum-Assisted Bonding: Eliminates air bubbles in the adhesive layer.

  • Adjustable Pressure System: Ensures uniform interface compression.

  • Programmable Process Parameters: Temperature, pressure, and dwell time can be set for specific materials.

  • Data Logging and Monitoring: Records process parameters for quality assurance.

  • Compact and Modular Design: Easy to integrate into existing workflows.

SiC Precision Bonding Machine for Wafers, Graphite Paper, and SiC Seeds 2


Technical Specifications


Parameter Specification Notes
Maximum Substrate Size ≤12 inches Supports smaller wafers and substrates
Vacuum Level ≤10⁻² Pa Ensures bubble-free bonding
Pressure Range 0–5 MPa Adjustable for uniform compression
Temperature Range Ambient – 300 °C Optional heating for specific adhesives
Cycle Time 5–60 min Adjustable depending on substrate and process
Power Supply 220V / 380V Single or three-phase depending on installation
Motion Control Manual or semi-automated Allows precise alignment and bonding


Typical Applications


  • SiC Seed Bonding: High-precision bonding of SiC seeds to wafers or substrates.

  • Semiconductor Wafers: Bonding single or multi-layer wafers.

  • Graphite Substrates: Bonding graphite paper or plates for high-temperature applications.

  • R&D and Pilot Production: Small-batch or research-scale bonding.

  • High-Temperature Materials: Bonding ceramic or composite substrates.


FAQ – Frequently Asked Questions


Q1: What substrates can this bonding machine handle?
A1: Wafers, SiC seeds, graphite paper, and graphite plates, including rigid and flexible substrates.

Q2: How is bubble-free bonding achieved?
A2: Vacuum-assisted bonding removes trapped air, ensuring a defect-free adhesive layer.

Q3: Is the bonding pressure adjustable?
A3: Yes, pressure is adjustable from 0–5 MPa for uniform interface compression.

Q4: Can this machine support pilot-scale production?
A4: Yes, it is suitable for research, pilot-scale, and small-batch production.

Q5: Is the machine easy to operate?
A5: Yes, the system features a user-friendly interface and semi-automated alignment for easy operation.