2inch 4H-SEMI SiC

SiC substrate
August 04, 2024
Keyword: SiC Substrate
Video Description:
Discover the 4H-SEMI Silicon Carbide SiC Substrate, a high-performance wafer ideal for power electronics, automotive electronics, and RF devices. Available in 2-inch diameter with thickness options of 350um or 500um, this prime or dummy grade substrate offers exceptional hardness and reliability for demanding applications.