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2inch 4H-SEMI SiC

SiC substrate
August 05, 2024
Category Connection: SiC Substrate
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2inch 4H-SEMI SiC
Tags:
#sic wafer #sic substrate #silicon carbide substrate
Brief: Discover the 4H-SEMI Silicon Carbide SiC Substrate, a high-performance wafer ideal for power electronics, automotive electronics, and RF devices. Available in 2-inch diameter with thickness options of 350um or 500um, this prime or dummy grade substrate offers exceptional hardness and reliability for demanding applications.
Related Product Features:
  • Made from SIC Monocrystal for superior quality and performance.
  • Supports customized designs with specific artwork requirements.
  • High hardness rating of approximately 9.2 Mohs for durability.
  • Widely used in high-tech industries like power and automotive electronics.
  • Available in both prime grade and dummy grade to suit various needs.
  • Double Side Polish with Si Face CMP for smooth surface finish.
  • Micropipe density as low as ≤5 micropipes/cm2 for high-quality applications.
  • Customizable specifications to meet unique project requirements.
Faqs:
  • How does 4H-SiC Semi ensure the quality of its wafers?
    4H-SiC Semi employs advanced manufacturing techniques, including Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), and follows stringent quality control processes to ensure high-quality wafers.
  • What's the main difference between 4H-N SiC and 4H-SEMI SiC?
    The primary difference is that 4H-N SiC (Nitrogen-doped) is n-type semiconductor silicon carbide, whereas 4H-Semi SiC is semi-insulating silicon carbide, which has been processed to have very high resistivity.
  • Can the 4H-SEMI SiC substrate be customized?
    Yes, the 4H-SEMI SiC substrate supports customized designs with specific artwork and specifications to meet unique project requirements.
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