Wafer Bonding Equipment Room Temperature Bondin Hydrophilic Bonding

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April 15, 2025
Category Connection: Semiconductor Equipment
This system is a high-end bonding equipment specifically designed for silicon carbide (SiC) power device manufacturing, supporting 2 to 12-inch wafer specifications. The system incorporates advanced room-temperature direct bonding and surface-activated bonding technologies, with special optimization for SiC-SiC and SiC-Si heterogeneous bonding processes.