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Wafer Thinning Equipment

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April 15, 2025
Category Connection: Semiconductor Equipment
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This equipment enables precision thinning of 4"-12" brittle semiconductor materials including silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and sapphire substrates, achieving thickness control accuracy of ±1 μm and total thickness variation (TTV) ≤2 μm to meet the stringent requirements of advanced packaging and power device fabrication.
Tags:
#4 inch SiC ingot growing furnace #8 inch SiC ingot growing furnace #6 inch SiC ingot growing furnace
Brief: Discover the Wafer Thinning System Precision Thinning Equipment, compatible with 4-12inch SiC, Si, GaAs, and sapphire wafers. Achieve ±1 μm thickness control and ≤2 μm TTV for advanced packaging and power device fabrication. Optimized for wide-bandgap semiconductors like SiC.
Related Product Features:
  • Precision thinning for 4-12inch brittle semiconductor materials including Si, SiC, GaAs, and sapphire.
  • Achieves thickness control accuracy of ±1 μm and TTV ≤2 μm.
  • Optimized grinding parameters and polishing processes for diverse material properties.
  • Integrated automated real-time thickness monitoring for stable performance.
  • Customizable vacuum chuck solutions for irregular products.
  • High-precision In-Feed spindle grinding with superior machining accuracy.
  • User-friendly operation with ergonomic HMI and precision Z-axis control.
  • Supports full-auto and semi-auto operation modes with real-time thickness measurement.
Faqs:
  • Does wafer thinning equipment support customization?
    Yes, we provide fully customized solutions, including specialized chucks for irregular wafers and tailored process recipe development.
  • What thickness control accuracy can wafer thinning machines achieve?
    Premium models achieve ±0.5μm thickness uniformity with TTV≤1μm (laser interferometry thickness monitoring system).
  • What materials are compatible with the Wafer Thinning System?
    The system is compatible with 4-12inch brittle semiconductor materials including silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and sapphire substrates.
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