4H Silicon Carbide Substrate for Power Electronics, RF Devices UV Optoelectronics

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November 20, 2025
Keyword: SiC Substrate
Video Description:
In this video, we explore the 4H Silicon Carbide Substrate, showcasing its high-purity single-crystal structure and ultra-low defect density. Watch as we highlight its applications in power electronics, RF devices, and UV optoelectronics, along with its precision CMP polishing and thermal performance.