Breakthrough! SAN An Optoelectronics 2000V SIC device released

Breakthrough! SAN An Optoelectronics 2000V SIC device released

Recently, according to the well-known foreign semiconductor media "Today semiconductor" revealed that China's wide band gap semiconductor materials, components and foundry service provider SAN 'an Optoelectronics Co., LTD., launched a series of SIC power products, including a series of 1700V and 2000V devices.

At present, the mainstream wafer foundries at home and abroad have 1700V SiC diodes to achieve mass production. However, from 650V, 900V, 1200V all the way to 1700V, it seems to have hit the limits of the process. Many domestic manufacturers have given up on high performance and turned to Costdown. In this context, SAN 'an's continuous iteration in high performance fully demonstrates its firm determination in research and development, which is truly commendable. "One inch long, one inch strong!"

First of all, the main highlights of this new product release:

>1700V silicon carbide MOSFET, on-resistance of 1000mΩ;

>1700V silicon carbide diode, available in 25A and 50A models;

>2000V 40A silicon carbide diode, 20A version is planned for the end of 2024;

> 2000V 35mΩ silicon carbide MOSFETs under development (release date 2025)

The new silicon carbide devices offer superior efficiency compared to traditional silicon-based alternatives in a wide range of applications, including:

> PV module inverters and power optimizers;

> Electric vehicle fast charging station;

> Energy storage system;

> High-voltage power grids and energy transmission networks.

In scenarios such as HVDC transmission and smart grids, high-voltage SiC devices can better withstand high voltages, reduce energy losses, and improve the efficiency of power transmission. For example, in long-distance transmission lines, high-voltage SiC devices can reduce energy loss due to voltage conversion, so that electrical energy is more efficiently transmitted to the destination. Moreover, its stable performance can reduce the probability of system failure caused by voltage fluctuation or overvoltage, and enhance the stability and reliability of the power system.

For electric vehicle inverters, on-board chargers and other components, high-voltage SiC devices can withstand higher voltages, improving the power performance and charging speed of electric vehicles. High-voltage SiC devices can operate at higher voltages, which means that at the same current, they can output higher power, thereby improving the acceleration performance and driving range of electric vehicles.

In photovoltaic inverters, high-voltage SiC devices can better adapt to the high voltage output of photovoltaic panels, improve the conversion efficiency of the inverter, and increase the power generation of photovoltaic power generation system. At the same time, the high-voltage SiC device can also reduce the size and weight of the inverter, which is easy to install and maintain.

700V silicon carbide MOSFETs and diodes are particularly suitable for applications that require a higher voltage margin than traditional 1200V devices. At the same time, 2000V silicon carbide diodes can be used in high DC bus voltage systems up to 1500V DC to meet the needs of industrial and power transmission applications.

"As the world transitions to cleaner energy and more efficient power systems, the demand for high-performance power semiconductors continues to grow," noted Vice President of Sales & Marketing. "Our expanded silicon carbide portfolio demonstrates our commitment to driving innovation in this critical area." The new 1700V and 2000V silicon carbide devices are now available for sample trial.