Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: 4H-N SiC
Payment & Shipping Terms
Delivery Time: 2-4 weeks
Payment Terms: T/T
Material: |
SiC Monocrystal |
Type: |
4H-N |
Size: |
4 Inch |
Thickness: |
350 Um |
Grade: |
P Grade Or D Grade |
Customization: |
Supported |
Material: |
SiC Monocrystal |
Type: |
4H-N |
Size: |
4 Inch |
Thickness: |
350 Um |
Grade: |
P Grade Or D Grade |
Customization: |
Supported |
4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch Prime Grade Dummy Grade
4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch Prime Grade Dummy Grade
The 4-inch 4H-N Silicon Carbide (SiC) wafer is a semiconductor material with a 4H polytype crystal structure.
It is typically oriented as (0001) Si-face or (000-1) C-face.
These wafers are N-type, doped with nitrogen, and have a thickness of about 350 µm.
The resistivity of these wafers generally falls between 0.015 to 0.025 ohm·cm, and they often feature a polished surface on one or both sides.
Silicon carbide wafers are renowned for their excellent thermal conductivity.
And also for a wide bandgap of 3.23 eV, high breakdown electric field, and significant electron mobility.
They exhibit high hardness, making them resistant to wear and thermal shock, and have exceptional chemical and thermal stability.
These properties make SiC wafers suitable for applications in harsh environments, including high-power, high-temperature, and high-frequency electronic devices.
Product Name: Silicon Carbide (SiC) Substrate
Hexagonal Structure: Unique electronic properties.
Wide Bandgap: 3.23 eV, enabling high-temperature operation and radiation resistance
High Thermal Conductivity: Facilitates efficient heat dissipation
High Breakdown Electric Field: Allows higher voltage operation with reduced leakage
High Electron Mobility: Enhances performance in RF and power devices
Low Dislocation Density: Improves material quality and device reliability
High Hardness: Offers resistance to wear and mechanical stress
Excellent Chemical Stability: Resists corrosion and oxidation
High Thermal Shock Resistance: Maintains integrity under rapid temperature changes
| Diameter | 4 inch (100mm) |
| Orientation | Off-axis: 4.0° toward <1120 > ±0.5° for 4H-N |
| Thickness | 350 um±20 um |
| Resistivity | 0.015-0.028 Q-cm |
| Micropipe Density | P:<2 cm^-2 ; D:<15 cm^-2 |
| Surface Finish | DSP or SSP |
| Carrier Concentration | 1 x 10^18 cm^-3~ 1 x 10^19 cm^-3 |
| Surface Roughness | Polish Ra ≤ 1nm |
SiC (Silicon Carbide) substrates are used in various high-performance applications due to their unique properties such as high thermal conductivity, high electric field strength, and wide bandgap. Here are some applications:
1. Power Electronics
MOSFETs: For efficient power conversion, capable of handling high voltages and currents.
Schottky Diodes: Used in power rectifiers and switching applications, offering low forward voltage drop and fast switching.
JFETs: Ideal for high-voltage power switching and amplification.
2. RF Devices
RF Amplifiers: Enhances performance in telecommunications, especially in high-frequency ranges.
MMICs (Monolithic Microwave Integrated Circuits): Used in radar systems, satellite communications, and other high-frequency applications.
3. LED Substrates
High-Brightness LEDs: Excellent thermal properties make it suitable for high-intensity lighting and display applications.
We can customize the size of the SiC substrate to meet your specific requirements.
We also offer a 4H-Semi HPSI SiC wafer with a size of 10x10mm or 5x5 mm and 6H-N,6H-Semi type.
The price is determined by the case, and the packaging details can be customized to your preference.
Delivery time is within 2-4 weeks. We accept payment through T/T.
*This is the customization one.
Our SiC Substrate product comes with comprehensive technical support and services to ensure optimal performance and customer satisfaction.
Our team of experts is available to assist with product selection, installation, and troubleshooting.
We offer training and education on the use and maintenance of our products to help our customers maximize their investment.
Additionally, we provide ongoing product updates and enhancements to ensure our customers always have access to the latest technology.
We proudly offer 8-inch SiC wafers, the largest available, with competitive pricing and excellent quality. Our wafers ensure superior TTV, bow, and warp control, making them the ideal choice for high-performance semiconductor applications. Stay ahead with our cutting-edge technology!
4H-N 8inch Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic
(click the picture for more)
Second
Our extensive range of SiC wafers includes 4H-N, 6H-N, 4H-SEMI, HPSI, 4H-P, and 6H-P types, catering to various industrial needs. These high-quality wafers offer excellent performance for power electronics and high-frequency applications, providing flexibility and
reliability for cutting-edge technologies.
①4H-N type
4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices
(click the picture for more)
②6H-N type
2Inch Sic Substrate 6H-N Type Thickness 350um 650um SiC Wafer
(click the picture for more)
③4H-SEMI type
4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates
(click the picture for more)
④HPSI type
10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
(click the picture for more)
⑤4H-P 6H-P type
Silicon Carbide Wafer 6H P-Type & 4H P-Type Zero MPD Production Dummy Grade Dia 4inch 6inch
(click the picture for more)
