10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate

Place of Origin CHINA
Brand Name ZMSH
Certification ROHS
Model Number 10X10X0.5mmt DSP
Minimum Order Quantity 10pcs
Price by case
Packaging Details single wafer box
Delivery Time 2weeks
Payment Terms T/T, Western Union
Supply Ability 5000pcs/month
Product Details
Material Sic Crystal Size 10x10mm
Thickness 500um Surface CMP At Si-face
Color Transparent Type Un-doped
High Light

2sp silicon carbide wafer


HPSI silicon carbide wafer


4H-SEMI silicon carbide substrate

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Product Description

High crystal quality for demanding power electronics

As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade  of 4H n -type silicon carbide (SiC) wafers.

Reliable and Ready

ZMSH offer device manufacturers a consistent, high quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the art physical vapor transport (PVT) growth techniques . Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.

Key features

  • Optimizes targeted performance and total cost of ownership for next generation power electronics devices
  • Large diameter wafers for improved economies of scale in semiconductor manufacturing
  • Range of tolerance levels to meet specific device fabrication needs
  • High crystal quality
  • Low defect densities

Sized for improved production

With the 150 mm wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.

Customized to meet your needs

Our SiC material can be customized to meet the performance and cost requirements of device design needs. We have the capability to produce high quality wafers for next generation devices with low defect densities as low as MPD ≤ 0.1 cm -2, TSD ≤ 400 cm- 2 and BPD ≤ 1,500 cm -2.

Learn more from our technical PDF on 150 mm Silicon Carbide Wafers

4H-SiC, Single Crystal
6H-SiC, Single Crystal
Lattice Parameters
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Stacking Sequence
Mohs Hardness
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
3.23 eV
3.02 eV
Break-Down Electrical Field
Saturation Drift Velocity

10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate 010x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate 1

10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate 210x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate 3

Q: What's the way of shipping and cost?

(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express account, it's great.

Q: How to pay?

(1) T/T, PayPal, West Union, MoneyGram and
Assurance payment on Alibaba and etc..
(2) Bank Fee: West Union≤USD1000.00),
T/T -: over 1000usd ,please by t/t

Q: What's the deliver time?

(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.

Q: Can I customize the products based on my need?

Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.