Silicon Carbide Wafer 6H P-Type & 4H P-Type Zero MPD Production Dummy Grade Dia 4inch 6inch

Silicon Carbide Wafer 6H P-Type & 4H P-Type Zero MPD Production Dummy grade Dia 4inch 6inch

Silicon Carbide Wafer 6H P-Type & 4H P-Type's abstract

This study explores the properties and applications of Silicon Carbide (SiC) wafers in both 6H and 4H P-Type polytypes, focusing on Zero Micropipe Density (Zero MPD) production-grade and dummy-grade wafers with diameters of 4-inch and 6-inch. The 6H and 4H P-Type SiC wafers possess unique crystalline structures, offering high thermal conductivity, wide bandgaps, and excellent resistance to high temperatures, voltages, and radiation. These features make them ideal for high-performance applications such as power electronics, high-frequency devices, and harsh environmental conditions. The wafers’ Zero MPD property further enhances their quality by eliminating micropipes, which significantly improves device reliability and performance. This paper details the manufacturing process, material characteristics, and potential use cases of these SiC wafers in advanced electronic systems, particularly for high-efficiency power devices, RF components, and other industrial applications requiring robust semiconductor substrates.

Silicon Carbide Wafer 6H P-Type & 4H P-Type's data chart

4 inch diameter Silicon Carbide (SiC) Substrate Specification

等级Grade			精选级(Z 级) Zero MPD Production Grade (Z Grade)	工业级(P 级) Standard Production Grade (P Grade)	测试级(D 级) Dummy Grade (D Grade)
直径 Diameter			99.5 mm~100.0 mm
厚度 Thickness			350 μm ± 25 μm
晶片方向 Wafer Orientation			Off axis: 2.0°-4.0°toward [112(-)0] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N
微管密度 ※ Micropipe Density			0 cm-2
电 阻 率 ※ Resistivity	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-type 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
主定位边方向 primary flat orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
主定位边长度 Primary Flat Length			32.5 mm ± 2.0 mm
次定位边长度 Secondary Flat Length			18.0 mm ± 2.0 mm
次定位边方向 Secondary Flat Orientation			Silicon face up: 90° CW. from Prime flat ± 5.0°
边缘去除 Edge Exclusion			3 mm		6 mm
局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
表面粗糙度 ※ Roughness			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
六方空洞(强光灯测) ※ Hex Plates By High Intensity Light			Cumulative area ≤0.05%		Cumulative area ≤0.1%
多型(强光灯观测) ※ Polytype Areas By High Intensity Light			None		Cumulative area≤3%
目测包裹物(日光灯观测) Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light			None		Cumulative length≤1×wafer diameter
崩边(强光灯观测) Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity			None
包装 Packaging			Multi-wafer Cassette or Single Wafer Container

Silicon Carbide Wafer 6H P-Type & 4H P-Type's properties

The properties of Silicon Carbide (SiC) wafers in both 6H and 4H P-Type polytypes, specifically with Zero Micropipe Density (Zero MPD) production and dummy grades, are as follows:

Crystal Structure:

6H-SiC: Hexagonal structure with six bilayers, providing lower electron mobility but higher thermal conductivity.

4H-SiC: Hexagonal structure with four bilayers, offering higher electron mobility and better performance in high-power and high-frequency devices.

P-Type Conductivity:

Both wafers are doped to create P-type conductivity (acceptor impurities like boron or aluminum), making them ideal for power devices that require the flow of positive charge carriers (holes).

Zero Micropipe Density (Zero MPD):

These wafers are produced with no micropipes, which are defects that can weaken device reliability. Zero MPD significantly improves the mechanical strength and performance of semiconductor devices.

Wide Bandgap:

Both polytypes have wide bandgaps, with 4H-SiC at 3.26 eV and 6H-SiC at 3.0 eV, enabling operation at high voltages and temperatures.

Thermal Conductivity:

SiC wafers possess high thermal conductivity, crucial for efficient heat dissipation in high-power electronics.

High Breakdown Voltage:

Both 6H and 4H SiC wafers have high breakdown electric fields, making them suitable for high-voltage applications.

Diameter:

The wafers are available in 4-inch and 6-inch diameters, supporting various device fabrication sizes and industry standards.

These properties make 6H and 4H P-Type SiC wafers with Zero MPD essential for high-performance power electronics, RF devices, and applications in extreme environments.

Silicon Carbide Wafer 6H P-Type & 4H P-Type's exhibition

Silicon Carbide Wafer 6H P-Type & 4H P-Type's application 

The 6H and 4H P-Type Silicon Carbide (SiC) wafers with Zero Micropipe Density (Zero MPD) have diverse applications due to their superior electrical, thermal, and mechanical properties. Key applications include:

Power Electronics:

Both 6H and 4H SiC wafers are used in high-power electronic devices such as MOSFETs, Schottky diodes, and thyristors. These devices are essential for electric vehicles (EVs), renewable energy systems (solar inverters, wind turbines), and industrial power systems due to their ability to handle high voltages, temperatures, and efficiencies.

High-Frequency Devices:

4H-SiC, with its higher electron mobility, is especially suitable for RF and microwave devices used in radar systems, satellite communications, and wireless infrastructure. These devices benefit from SiC’s ability to operate at high frequencies with low energy loss.

Aerospace and Defense:

The high thermal conductivity, radiation resistance, and Zero MPD make SiC wafers ideal for aerospace and defense applications, such as power amplifiers, sensors, and communication systems operating in extreme environments.

Electric Vehicles (EVs):

SiC wafers are key components in EV powertrains, including onboard chargers and inverters, improving energy efficiency, increasing driving range, and reducing heat generation in electric cars.

High-Temperature Electronics:

SiC wafers’ ability to withstand high temperatures without degradation makes them ideal for industrial equipment, oil and gas exploration, and space exploration systems that must operate reliably in harsh thermal environments.

Renewable Energy:

SiC-based power devices help increase the efficiency of energy conversion in solar and wind energy systems by minimizing energy losses and allowing operation at high voltages and temperatures.

Medical Devices:

SiC wafers are also used in advanced medical technologies, including high-power medical imaging equipment and devices that require durable, high-performance materials.

These applications leverage the wafers’ high efficiency, reliability, and ability to operate in extreme conditions, making 6H and 4H P-Type SiC wafers indispensable in cutting-edge technology.

Q&A

Q:What are the different types of silicon carbide?

A: Silicon Carbide (SiC) exists in several polytypes, which are different crystal structures that result in varying physical and electronic properties. The most common types of silicon carbide include:

4H-SiC (Hexagonal):

Structure: Hexagonal crystal structure with a four-layer repeating sequence.

Properties: Wide bandgap (3.26 eV), high electron mobility, and high breakdown electric field.

Applications: Preferred for high-power, high-frequency, and high-temperature applications such as power electronics, electric vehicles, and RF devices due to its excellent electrical performance.

6H-SiC (Hexagonal):

Structure: Hexagonal crystal structure with a six-layer repeating sequence.

Properties: Slightly lower bandgap (3.0 eV) and lower electron mobility compared to 4H-SiC but still offers high thermal conductivity and high voltage resistance.

Applications: Used in power electronics, high-voltage switching, and devices that require high thermal stability.

3C-SiC (Cubic):

Structure: Cubic crystal structure, also known as beta-SiC.

Properties: Has a smaller bandgap (2.3 eV) and exhibits high electron mobility but is less thermally stable than the hexagonal forms.

Applications: Commonly used in optoelectronic devices, sensors, and microelectromechanical systems (MEMS). It can be grown on silicon substrates, making it more compatible with existing silicon technology.

15R-SiC (Rhombohedral):

Structure: Rhombohedral crystal structure with a 15-layer repeating sequence.

Properties: It has an intermediate bandgap (2.86 eV) and electron mobility between 4H and 6H-SiC but is less commonly used.

Applications: Rarely used in commercial applications due to limited availability and less favorable properties compared to 4H and 6H polytypes.

Other Polytypes (e.g., 2H-SiC, 8H-SiC, 27R-SiC):

There are over 200 known polytypes of SiC, but these are less common and not widely used in commercial applications. They have unique stacking sequences and variations in their electronic and thermal properties.

Key Differences:

• The main differences among these types lie in their stacking sequence, bandgap energy, electron mobility, and suitability for different applications. The most commercially significant types are 4H-SiC and 6H-SiC due to their superior electrical properties, high thermal conductivity, and ability to operate in high-power, high-frequency, and high-temperature environments.

These diverse polytypes make silicon carbide a versatile material for various high-performance electronic and industrial applications.