3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

  • High Light

    sic wafer


    sic substrate

  • Material
    Sic Crystal
  • Industry
    Semiconductor Wafer
  • Application
    Semiconductor, Led, Device, Power Electronics,5G
  • Color
    Blue, Green, White
  • Type
    4H,6H, DOPED, No Doped, High Purity
  • Place of Origin
  • Brand Name
  • Model Number
    4inch--semi high purity
  • Minimum Order Quantity
  • Price
    by required
  • Packaging Details
    Packaged in a class 100 clean room environment, in cassettes of single wafer containers
  • Delivery Time
  • Supply Ability

3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​


Application areas


1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET


2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED



• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap



Silicon Carbide SiC crystal substrate wafer carborundum



Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s


2. substrates size of standard


3 inch Diameter 4H Silicon Carbide Substrate Specifications
SUBSTRATE PROPERTY Ultra Grade Production Grade Research Grade Dummy Grade
Diameter 76.2 mm ±0.38 mm
Surface Orientation on-axis: {0001} ± 0.2°; off-axis: 4°toward <11-20> ± 0.5°
Primary Flat Orientation <11-20> ± 5.0 ̊
Secondary Flat Orientation 90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up
Primary Flat Length 22.0 mm ± 2.0 mm
Secondary Flat Length 11.0 mm ± 1.5mm
Wafer Edge Chamfer
Micropipe Density ≤1 micropipes/ cm2 ≤5 micropipes/ cm2 ≤10 micropipes/ cm2 ≤50 micropipes/ cm2
Polytype areas by high-intensity light None permitted ≤10% area
Resistivity 0.015 Ω·cm~0.028 Ω·cm (area 75%)0.015Ω·cm~0.028 Ω·cm
Thickness 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV ≤10 μm ≤15 μm
Bow(absolute value) ≤15 μm ≤25 μm
Warp ≤35 μm



3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics 0



Q: What's the way of shipping and cost and pay term ?

A:(1) We accept100% T/T In advance by  DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.


Q: What's your MOQ?

A: (1) For inventory, the MOQ is 2pcs.

(2) For customized products, the MOQ is 25pcs up.


Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size  based on your needs.


Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.