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3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers

Name: 3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers
Brand: zmkj
SKU: 4H-N, 3inch
Rating: 4.5 (130 reviews)

Product Details

Place of Origin: china

Brand Name: zmkj

Model Number: 4H-N, 3inch

Payment & Shipping Terms

Minimum Order Quantity: 10pcs

Price: by required

Packaging Details: Packaged in a class 100 clean room environment, in cassettes of single wafer containers

Delivery Time: 10-20days

Supply Ability: 100pcs/months

Get Best Price

Product Details

Product Description

Highlight: 
                                                                                                                                                                                                                                                                                                                4h-N Silicon Carbide Sic Wafers, DSP Surface Silicon Carbide Wafer, 0.35mm Silicon Carbide Wafer
                              

Material:	Silicon Carbide Crystal	Size:	3inch Or 4inch
Application:	Equipment Test	Resistivity:	0.015~0.028Ω.cm
Type:	4H-N	Thickness:	0.35mm
Surface:	DSP	Orientation:	0° Off C-axis

Material:	Silicon Carbide Crystal
Size:	3inch Or 4inch
Application:	Equipment Test
Resistivity:	0.015~0.028Ω.cm
Type:	4H-N
Thickness:	0.35mm
Surface:	DSP
Orientation:	0° Off C-axis

3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers

4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,

customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade;

3inch 4inch 4h-n 4h-semi dummy test grade silicon carbide sic wafers

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

Product Name:

Silicon carbide (SiC) crystal substrate

Product Description:

2-6inch

Technical parameters:

Cell structure	Hexagonal
Lattice constant	a = 3.08 Å c = 15.08 Å
Priorities	ABCACB (6H)
Growth method	MOCVD
Direction	Growth axis or Partial (0001) 3.5 °
Polishing	Si surface polishing
Bandgap	2.93 eV (indirect)
Conductivity type	N or seimi ,high purity
Resistivity	0.076 ohm-cm
Permittivity	e (11) = e (22) = 9.66 e (33) = 10.33
Thermal conductivity @ 300K	5 W / cm. K
Hardness	9.2 Mohs

Specifications:

6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A

Standard Packaging:

1000 clean room, 100 clean bag or single box packaging

Application of silicon carbide in power device industry

Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV 1.12 3.26 3.41
Breakdown electric field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs 1400 950 1500
Drift speed 10^7 cm/s 1 2.7 2.5
Thermal conductivity W/cmK 1.5 3.8 1.3

Compared with silicon (Si) devices, silicon carbide (SiC) power devices can effectively achieve high efficiency, miniaturization and light weight of power electronic systems. The energy loss of silicon carbide power devices is only 50% of that of Si devices, the heat generation is only 50% of that of silicon devices, and it has a higher current density. At the same power level, the volume of silicon carbide power modules is significantly smaller than that of silicon power modules. Taking the intelligent power module IPM as an example, using silicon carbide power devices, the module volume can be reduced to 1/3 to 2/3 of silicon power modules.

There are 3 types of silicon carbide power diodes: Schottky diodes (SBD), PIN diodes and junction barrier control Schottky diodes (JBS). Due to the Schottky barrier, SBD has a lower junction barrier height, so SBD has the advantage of low forward voltage. The emergence of silicon carbide SBD increased the application range of SBD from 250V to 1200V. At the same time, its high temperature characteristics are good, from room temperature to 175°C limited by the shell, the reverse leakage current hardly increases. In the application field of rectifiers above 3kV, silicon carbide PiN and silicon carbide JBS diodes have attracted attention due to their higher breakdown voltage, faster switching speed, smaller volume and lighter weight than silicon rectifiers.

Silicon carbide power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance and high stability. It is the preferred device in the field of power devices below 300V. It is reported that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that silicon carbide MOSFET will occupy an advantageous position in the field of 3kV to 5kV.

Silicon carbide insulated gate bipolar transistors (SiC BJT, SiC IGBT) and silicon carbide thyristors (SiC Thyristor), silicon carbide P-type IGBT devices with a blocking voltage of 12kV have good forward current capability. The on-resistance of silicon carbide IGBT devices can be compared with unipolar silicon carbide power devices. Compared with Si bipolar transistors, SiC bipolar transistors have 20-50 times lower switching losses and lower conduction voltage drop. Silicon carbide BJT is mainly divided into epitaxial emitter and ion implanted emitter BJT, and the typical current gain is between 10-50.

2. substrates size of standard

4 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter		76.2 mm±0.3 mm
Thickness		350 μm±25μm (200-2000um thickness also is ok)
Wafer Orientation		Off axis : 4.0° toward <1120> ±0.5° for 4H-N standard size
Micropipe Density		≤1 cm-2	≤5 cm-2	≤15 cm-2	≤50 cm-2
Resistivity	4H-N	0.015~0.028 Ω•cm
	6H-N	0.02~0.1 Ω•cm
	4/6H-SI	≥1E5 Ω·cm
Primary Flat and length		{10-10}±5.0° ,32.5 mm±2.0 mm
Secondary Flat Length		18.0mm±2.0 mm
Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion		3 mm
TTV/Bow /Warp		≤15μm /≤25μm /≤40μm
Roughness		Polish Ra≤1 nm ,CMP Ra≤0.5 nm
Cracks by high intensity light		None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm

Hex Plates by high intensity light		Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%
Polytype Areas by high intensity light		None		Cumulative area ≤2%	Cumulative area ≤5%

Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.

3.Products detail display

Delivery ＆ Package

3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers 3

FAQ

Q1. Is your company a factory or trade company?
We are the factory and we also can do export ourself.
Q2.Is you company only work with sic business?
yes; however we don‘t grow the sic crystal by self.
Q3. Could you supply sample?
Yes,we can supply sapphire sample according to customer's requirement
Q4. Do you have any stock of sic wafers ?
we usually keep some standard size sic wafers from 2-6inch wafers in stock
Q5.Where is your company located.
Our company located in shanghai ,China.
Q6. How long will take to get the products.
Generally it will take 3~4 weeks to process.It is depend on the and the size of the products.

Tags:

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

Indium Phosphide Wafer

Sapphire Parts

Synthetic Ruby

Sapphire Cover Glass

LiNbO3 Wafer

GaAs Wafer

Synthetic Sapphire Rod

IC Silicon Wafer

Fused Quartz Plate

Ceramic Substrate

Synthetic Gem Crystal

Lab Wrapper

3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers

4h-N Silicon Carbide Sic Wafers

DSP Surface Silicon Carbide Wafer

0.35mm Silicon Carbide Wafer

sic wafer,

sic substrate,

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

Indium Phosphide Wafer

Sapphire Parts

Synthetic Ruby