3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers
Material | Silicon Carbide Crystal | Size | 3inch Or 4inch |
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Application | Equipment Test | Resistivity | 0.015~0.028Ω.cm |
Type | 4H-N | Thickness | 0.35mm |
Surface | DSP | Orientation | 0° Off C-axis |
High Light | 4h-N Silicon Carbide Sic Wafers,DSP Surface Silicon Carbide Wafer,0.35mm Silicon Carbide Wafer |
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,
customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade;
3inch 4inch 4h-n 4h-semi dummy test grade silicon carbide sic wafers
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
Product Name: | Silicon carbide (SiC) crystal substrate | ||||||||||||||||||||||||
Product Description: | 2-6inch | ||||||||||||||||||||||||
Technical parameters: |
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Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | ||||||||||||||||||||||||
Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV 1.12 3.26 3.41
Breakdown electric field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs 1400 950 1500
Drift speed 10^7 cm/s 1 2.7 2.5
Thermal conductivity W/cmK 1.5 3.8 1.3
2. substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification |
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Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||||
Diameter | 76.2 mm±0.3 mm | ||||||||
Thickness | 350 μm±25μm (200-2000um thickness also is ok) | ||||||||
Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N standard size | ||||||||
Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |||||
Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
6H-N | 0.02~0.1 Ω•cm | ||||||||
4/6H-SI | ≥1E5 Ω·cm | ||||||||
Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | ||||||||
Secondary Flat Length | 18.0mm±2.0 mm | ||||||||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||||
Edge exclusion | 3 mm | ||||||||
TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||||||
Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | ||||||||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||||
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||||
Sic wafer & ingots 2-6inch and other customized size also can be provided.
3.Products detail display
Delivery & Package
- Q1. Is your company a factory or trade company?
- We are the factory and we also can do export ourself.
- Q2.Is you company only work with sic business?
- yes; however we don‘t grow the sic crystal by self.
- Q3. Could you supply sample?
- Yes,we can supply sapphire sample according to customer's requirement
- Q4. Do you have any stock of sic wafers ?
- we usually keep some standard size sic wafers from 2-6inch wafers in stock
- Q5.Where is your company located.
- Our company located in shanghai ,China.
- Q6. How long will take to get the products.
- Generally it will take 3~4 weeks to process.It is depend on the and the size of the products.