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SiC Epitaxial Wafer Substrate Double Side Polishing Semiconductor Industrial Applications
  • SiC Epitaxial Wafer Substrate Double Side Polishing Semiconductor Industrial Applications
  • SiC Epitaxial Wafer Substrate Double Side Polishing Semiconductor Industrial Applications
  • SiC Epitaxial Wafer Substrate Double Side Polishing Semiconductor Industrial Applications

SiC Epitaxial Wafer Substrate Double Side Polishing Semiconductor Industrial Applications

Place of Origin CHINA
Brand Name ZMSH
Certification rohs
Model Number SiC substrate
Product Details
Surface Hardness:
HV0.3>2500
Breakdown Voltage:
5.5 MV/cm
Tensile Strength:
>400MPa
Substrate Type:
Substrate
Density:
3.21 G/cm3
Dopant:
N/A
Size:
Customized
Thermal Expansion Coefficient:
4.5 X 10-6/K
High Light: 

Semiconductor SiC epitaxial wafer substrate

,

Double side Polishing Semiconductor SiC substrate

,

Industrial SiC epitaxial wafer substrate

Product Description

SiC epitaxial wafer substrate Double-side polishing Semiconductor industrial applications

Product Description:

  Silicon carbide (SiC Substrate) was discovered in 1893 as an industrial abrasive for grinding wheels and automotive brakes. About midway through the 20th century, SiC Substrate uses grew to include in LED technology. Since then, it has expanded into numerous semiconductor applications due to its advantageous physical properties. These properties are apparent in its wide range of uses in and outside the semiconductor industry. With Moore’s Law appearing to reach it’s limit, many companies within the semiconductor industry is looking towards silicon carbide as the semiconductor material of the future.

  SiC Substrate can be produced using multiple polytypes of SiC, although within the semiconductor industry, most substrates are either 4H-SiC, with 6H- becoming less common as the SiC market has grown. When referring to 4H- and 6H- silicon carbide, the H represents the structure of the crystal lattice. The number represents the stacking sequence of the atoms within the crystal structure. This is described in the SVM capabilities chart below.

 

Features:

  • Product Name: SiC Substrate
  • Available sizes: 0.5x0.5mm, 1x1mm, 5x5mm, 10x10mm
  • Dielectric Constant: 9.7
  • Surface Flatness: λ/10@632.8nm
  • Compressive Strength: >1000MPa
  • Surface options: Si-face CMP, C-face Mp
  • Additional features:Available in 1x1cm size
 

Applications:

The silicon carbide wafers come in two sizes, 10x10mm and 5x5mm. They are 4H-N SIC wafers with a surface hardness of HV0.3>2500 and a tensile strength of >400MPa. The surface roughness is Ra<0.5nm, and the surface flatness is λ/10@632.8nm.

ZMSH SIC010 is suitable for various product application occasions and scenarios. It is commonly used in the semiconductor industry for high-temperature and high-power devices. The silicon carbide wafers have excellent thermal conductivity, making them suitable for power electronic devices. They are also used for LED lighting and wireless communication systems.

Due to their high hardness and durability, ZMSH SIC010 is used in harsh environments such as aerospace and defense. They are also used for cutting tools and abrasives due to their wear resistance.

The SiC substrate product is also used in research and development. The 4H-N SIC wafers are commonly used in the study of SiC crystal growth, epitaxy, and device fabrication.

ZMSH SIC010 is versatile and can be used in a variety of industries. Its excellent properties make it an ideal choice for high-temperature, high-power, and harsh environments. The customized plastic boxes make it easy to transport and store the silicon carbide wafers.

 

Customization:

ZMSH SIC Substrate Product Customization Services:

  • Customized shape SiC plates available
  • Customized size SiC chips available
  • Silicon carbide wafers also available

Product Attributes:

Brand Name ZMSH
Payment Terms T/T
Minimum Order Quantity 10pc
Surface Roughness Ra<0.5nm
Compressive Strength >1000MPa
Tensile Strength >400MPa
 

Packing and Shipping:

Product Packaging:

The SiC substrate product will be carefully wrapped in foam padding to ensure its safety during shipping. The wrapped substrate will then be placed in a sturdy cardboard box and sealed to prevent any damage during transportation.

Shipping:

The SiC substrate product will be shipped via a reliable courier service that provides tracking information, such as DHL or FedEx. The shipping cost will depend on the destination and the weight of the package. The estimated shipping time will also depend on the location of the recipient.

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Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
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