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Good price 4H Silicon Carbide Substrate  for Power Electronics, RF Devices & UV Optoelectronics online
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Created with Pixso. Home Created with Pixso. Products Created with Pixso. Sic 6H P Online Manufacturer
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6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade

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2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um SiC wafer Prime Grade Dummy Grade

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4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics

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The SiC Ingot Growing Furnace Uses PVT, Lely TSSG And LPE Methods To Grow Large Size Crystals Of 4 Inch, 6 Inch And 8 Inch

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High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth

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4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade

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2Inch Sic Substrate 6H-N Type Thickness 350um 650um Sic Wafer

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Customized Size 5x5mm 0.5x0.5mm 4H-N SIC Chips Plates

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Resistivity >1E7ohm.Cm SiC Substrate By Customzied Shape

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10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips

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Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

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12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications

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