From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, next-generation displays, and other fields, with huge market potential. In terms of application, it is divided into low voltage, medium voltage, and high voltage fields:
Low voltage field
Mainly targeting some consumer electronics, such as PFC and power supply; For example, Xiaomi and Huawei have launched fast chargers using gallium nitride devices.
Medium voltage field
Mainly in automotive electronics and rail transit and power grid systems with a voltage of over 3300V. For example, Tesla was the earliest automotive manufacturer to use silicon carbide devices, using the model 3. In the field of medium and low voltage, silicon carbide has very mature diodes and MOSFET products that are being promoted and applied in the market.
High voltage field
Silicon carbide has unique advantages. But so far, there has not been a mature product launched in the high-voltage field, and the world is in the stage of research and development.
Electric vehicles are the best application scenario for silicon carbide. Toyota's electric drive module (the core component of electric vehicles) reduces the volume of silicon carbide devices by 50% or more compared to silicon based IGBTs, and the energy density is also much higher than that of silicon based IGBTs. This is also the reason why many manufacturers tend to use silicon carbide, which can optimize the layout of components in the car and save more space.
Polytype Crystal structure
Thermal conductivity (n-type; 0.020 Ω*cm)
Lattice parameters Single-Crystal 4H
Hexagonal a~4.2 W/cm • K @ 298 K c~3.7 W/cm • K @ 298 K； a=3.073 Å c=10.053 Å
Supported diameters 2inch ~8inch; 100 mm* & 150 mm
Bandgap 3.26 eV
Thermal conductivity (HPSI) :a~4.9 W/cm • K @ 298 K ;c~3.9 W/cm • K @ 298 K
Mohs hardness 9.2;
Advantages of Silicon Carbide
There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications. Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.
Silicon carbide substrates also have a low coefficient for thermal expansion. Thermal expansion is the amount and direction a material expands or contracts as it heats up or cools down. The most common explanation is ice, although it behaves opposite of most metals, expanding as it cools and shrinking as it heats up. Silicon carbide’s low coefficient for thermal expansion means that it does not change significantly in size or shape as it is heated up or cooled down, which makes it perfect for fitting into small devices and packing more transistors onto a single chip.
Another major advantage of these substrates is their high resistance to thermal shock. This means they have the ability to change temperatures rapidly without breaking or cracking. This creates a clear advantage when fabricating devices as it is another toughness characteristic that improves the lifetime and performance of silicon carbide in comparison to traditional bulk silicon.
On top of its thermal capabilities, it is a very durable substrate and does not react with acids, alkalis or molten salts at temperatures up to 800°C. This gives these substrates versatility in their applications and further assists their ability to out perform bulk silicon in many applications.
Its strength at high temperatures also allows it to safely operate at temperatures over 1600°C. This makes it a suitable substrate for virtually any high temperature application.
4H- and 6H- SiC are semiconductor materials with a diameter of 50.8mm (2") and 200mm (8"), respectively. Both of them are N/Nitrogen-doped and are intrinsic/HPSI.
The resistivity of 4H-SiC ranges from 0.015 to 0.028 ohm*cm while the resistivity of 6H-SiC is greater than 1E7 ohm*cm. The thickness of both types of SiC is 250um to 15,000um (15mm). They both have a single or double side polished surface finish, stacking sequence of ABCB for 4H-SiC and ABCACB for 6H-SiC.
The dielectric constant is 9.6 for 4H-SiC and 9.66 for 6H-SiC. The electron mobility of 4H-SiC is 800 cm2/V*S and 400 cm2/V*S for 6H-SiC. Finally, both have a density of 3.21 · 103 kg/m3.
ZMSH SIC010 SiC Substrate is a new type of semiconductor device material with high strength and high temperature resistance. It is widely used in the semiconductor industry due to its excellent performance. With customized size sic chips, 4H-N SIC wafers and custom size plates, ZMSH SIC010 SiC Substrate has become an ideal material for the development of advanced semiconductor devices.
The material of ZMSH SIC010 SiC Substrate is SiC monocrystal with tensile strength of more than 400MPa. It has a high flatness of λfirstname.lastname@example.org, and the size can be customized according to customer requirements. The minimum order quantity is 10pc, and the price is based on the order quantity. The packaging is customized plastic box and the delivery time is within 30 days. Payment terms are T/T, and the supply capacity is 1000pc/month.
ZMSH SIC010 SiC Substrate is widely used in various fields such as power electronics, microwave communication, optoelectronics and aerospace. It is an ideal material for the manufacture of high-precision electronic components with good performance and reliability. With excellent performance, ZMSH SIC010 SiC Substrate is certified by RoHS and has been widely recognized by customers.
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