Sapphire Wafer 6'' Dia 150mm±0.1mm Thickness 1000um C-Plane 99.99% Pure

Sapphire Wafer 6" Dia 150mm±0.1mm Thickness 1000um C-plane 99.99%pure

Our 6-inch diameter sapphire wafers are precision-engineered single crystal Al₂O₃ substrates designed for demanding semiconductor applications. With strict diameter control at 150.0±0.1mm and standard thickness of 1000±15μm, these C-plane (0001) oriented wafers deliver exceptional performance for:

• GaN-based LED and power device production
• High-frequency RF components
• Advanced optical systems

Specifications

Applications

Optoelectronics

• Micro-LED displays
• UV sterilization devices
• High-brightness lighting

Power Electronics

• GaN HEMTs for 5G/6G
• EV power modules
• Radar systems

Emerging Technologies

• Quantum dot devices
• MEMS resonators
• Photonic sensors

KEY Features of Sapphire Wafer

1. Superior Thermal Performance

• High thermal conductivity: 35 W/m·K @25°C
• Low CTE: 5.3×10⁻⁶/K (25-500°C)
• Thermal shock resistant: Withstands ΔT >500°C

2. Optical Excellence

• Broadband transmission: 85%@250nm → 92%@450nm → 90%@4000nm
• Minimal birefringence: <3 nm/cm @633nm
• Laser-grade polish: PV <λ/4 @633nm

3. Mechanical Robustness

• Extreme hardness: 2000 HV (Mohs 9)
• High flexural strength: 700±50 MPa
• Young's modulus: 400 GPa

4. Manufacturing Advantages

• Diameter control: 150.0±0.1mm (compatible with 6" tools)
• Thickness options: 430-1000μm available
• Edge profiling: Notched or laser-marked per SEMI standards

Frequently Asked Questions

Q: 1. How should wafers be handled and stored?

1. Always use cleanroom (Class 1000 or better)
2. Handle with vacuum wands or PEEK-tipped tools
3. Store in nitrogen-purged cassettes
4. Avoid UV exposure

Q: 2 Ordering Information

Standard Configurations

• Diameter: 150.0 mm
• Thickness: 1000 μm
• Orientation: C-plane (0001)
• Primary Flat: 32.5 mm