Sapphire Wafer C-Plane to A 0.2±0.1°off 99.999% Al2O3 Dia 50.8 Thickness 430um DSP SSP

2" Sapphire Wafer C-Plane to A 0.2°±0.1° Off, 99.999% Al₂O₃, 430µm Thickness, DSP/SSP

This 2-inch sapphire wafer features ultra-precise C-plane to A-axis off-cut (0.2°±0.1°) and 99.999% (5N) purity, optimized for high-performance epitaxial growth and specialized optoelectronic applications. With a 430µm thickness and options for double-side polishing (DSP) or single-side polishing (SSP), the wafer delivers exceptional surface quality (Ra <0.3nm) and crystallographic consistency, making it ideal for GaN-based devices, laser systems, and research-grade substrates. Its controlled off-axis orientation reduces step-bunching defects during epitaxy, while the ultra-high purity ensures minimal impurity-driven performance degradation in sensitive applications like quantum optics and RF filters.

Key Features

Precision Off-Cut Orientation:

C-plane to A-axis 0.2°±0.1° off-cut, engineered to enhance epitaxial layer uniformity and reduce defects in GaN growth.

Ultra-High Purity:

99.999% (5N) Al₂O₃, with trace impurities (Fe, Ti, Si) <5ppm, critical for high-frequency and low-loss devices.

Submicron Surface Quality:

DSP/SSP options:

DSP: Ra <0.3nm (both sides), ideal for optical and laser applications.

SSP: Ra <0.5nm (front side), cost-effective for epitaxy.

TTV <5µm for uniform thin-film deposition.

Material Excellence:

Thermal Stability: Melting point ~2,050°C, suitable for MOCVD/MBE processes.

Optical Transparency: >90% transmission (400nm–4,000nm).

Mechanical Robustness: 9 Mohs hardness, resistant to chemical etching.

Research-Grade Consistency:

Dislocation density <300 cm⁻², ensuring high yield for R&D and pilot production.

Applications

GaN Epitaxy:

LEDs/Laser Diodes: Blue/UV emitters with reduced threading dislocations.

HEMTs: High-electron-mobility transistors for 5G and radar.

Optical Components:

Laser Windows: Low scatter loss for CO₂ and UV lasers.

Waveguides: DSP wafers for integrated photonics.

Acoustic Wave Devices:

SAW/BAW Filters: Off-cut orientation improves frequency stability.

Quantum Technologies:

Single-Photon Sources: High-purity substrates for SPDC crystals.

Industrial Sensors:

Pressure/Temperature Sensors: Chemically inert covers for harsh environments.

Specifications

Q&A

Q1: Why choose a 0.2° off-cut instead of standard C-plane?
A1: The 0.2° off-cut suppresses step-bunching during GaN epitaxy, improving layer uniformity and reducing defects in high-brightness LEDs and laser diodes.

Q2: How does 5N purity impact RF device performance?
A2: 99.999% purity minimizes dielectric losses at high frequencies, critical for 5G filters and low-noise amplifiers.

Q3: Can DSP wafers be used for direct bonding?
A3: Yes. DSP’s <0.3nm roughness enables atomic-level bonding for heterogenous integration (e.g., sapphire-on-silicon).

Q4: What’s the advantage of 430µm thickness?
A4: Balances mechanical strength (for handling) with thermal conductivity, optimal for rapid thermal processing.