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Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure

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Place of Origin: China

Brand Name: zmsh

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Sapphire Wafer 12''

,

Pure Sapphire Wafer

Orientation:
C-plane <0001>
Diameter:
300mm±0.5mm
Thickness:
1000um±50um
Material:
Sapphire Crystal
Polished:
SSP Or DSP
TTV:
<15um
Bow:
<50um
Orientation:
C-plane <0001>
Diameter:
300mm±0.5mm
Thickness:
1000um±50um
Material:
Sapphire Crystal
Polished:
SSP Or DSP
TTV:
<15um
Bow:
<50um
Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure

12" Sapphire Wafer 250mm Diameter (±0.5mm) 1000µm Thickness C-Plane 

 

This 12-inch (250mm) sapphire wafer delivers industry-leading precision (±0.5mm diameter, 1,000µm thickness) and ultra-high purity (99.99%), optimized for advanced semiconductor and optoelectronic applications. The C-plane (0001) orientation ensures exceptional epitaxial growth quality for GaN-based devices, while its large diameter maximizes production efficiency for high-volume manufacturing. With superior thermal stability (>2,000°C melting point), optical transparency (85%+ from UV to mid-IR), and mechanical robustness (9 Mohs hardness), this wafer is ideal for power electronics, LEDs, laser systems, and cutting-edge quantum technologies.

 

Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure 0Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure 1

 


 

Key Features of Sapphire Wafer

 

Large-Format Precision:

Diameter: 250mm ±0.5mm, compatible with 12" semiconductor fabrication lines.

Thickness: 1,000µm ±15µm, engineered for mechanical strength and process uniformity.

 

Ultra-High Purity (4N):

99.99% pure Al₂O, eliminating impurities that degrade optical/electrical performance.

 

Exceptional Material Properties:

Thermal Stability: Melting point ~2,050°C, suitable for extreme environments.

Optical Clarity: >85% transmission from 350nm to 4,500nm (UV to mid-IR).

Hardness: 9 Mohs, resistant to scratches and chemical corrosion.

 

Surface Quality Options:

Epi-ready polish: Ra <0.3nm (AFM-measured), ideal for thin-film deposition.

Double-side polishing available for precision optical applications.

 

Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure 2

 


 

Applications of Sapphire Wafer

 

Advanced Optoelectronics:

GaN-based LEDs/Laser Diodes: Blue/UV LEDs, VCSELs for LiDAR and 3D sensing.

Micro-LED Displays: Uniform substrates for next-gen AR/VR screens.

 

Power & RF Devices:

5G/6G Power Amplifiers: Low dielectric loss at high frequencies.

HEMTs and MOSFETs: High-voltage transistors for electric vehicles.

 

Industrial & Defense:

IR Windows/Missile Domes: Transparency in harsh environments (e.g., aerospace).

Sapphire Sensors: Corrosion-resistant covers for industrial monitoring.

 

Emerging Technologies:

Wearable Tech: Ultra-durable cover glass for smartwatches.

 

Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane 99.99% Pure 3

 


 

Specifications

 

Parameter

Value

Diameter 250mm ±0.5mm
Thickness 1,000µm ±15µm
Orientation C-plane (0001) ±0.2°
Purity >99.99% (4N)
Surface Roughness (Ra) <0.3nm (epi-ready)
TTV <15µm
Bow <50um

 

 


 

Q&A

 

Q1: Why is a 12" sapphire wafer advantageous over smaller diameters?
A1: The 250mm size reduces production costs per chip by enabling more dies per wafer, critical for high-volume manufacturing (e.g., LED fab lines). It also aligns with 300mm Si wafer tool compatibility for hybrid semiconductor processes.

 

Q2: How does 1,000µm thickness benefit device performance?
A2: The 1mm thickness enhances mechanical stability during handling and high-temperature processes (e.g., MOCVD), while maintaining optimal thermal conductivity for heat dissipation in power devices.

 

Q3: Can this wafer be used for extreme UV (EUV) applications?
A3: Yes. Its high UV transparency (down to 350nm) and radiation resistance make it suitable for EUV lithography components and space-based optics.

 

Q4: Is the C-plane orientation customizable?
A5: Yes. A-plane (1120) and R-plane (1102) wafers can be produced for specialized applications like SAW filters or heteroepitaxy.