Sapphire Wafer C-Plane to A 1°off 99.999% Al2O3 Dia 2"3"4"6"8" customize thickness

Sapphire Wafer – C-Plane to A 1° Off, 99.999% Al₂O₃, Diameter 2"/3"/4"/6"/8", Custom Thickness

This high-precision sapphire wafer features a C-plane to A-axis 1° off-cut orientation and 99.999% (5N) purity, optimized for superior epitaxial growth in advanced optoelectronic and semiconductor applications. Available in standard diameters (2" to 8") with customizable thicknesses, it provides exceptional crystallographic uniformity, ultra-low defect density, and outstanding thermal/chemical stability. The controlled 1° off-cut angle enhances GaN and AlN epitaxy by reducing step-bunching defects, making it ideal for high-performance LEDs, laser diodes, power electronics, and RF devices.

Key Features of Sapphire Wafer

Precision Off-Cut Orientation

C-plane to A-axis 1° ±0.1° off-cut, engineered to improve epitaxial film uniformity and minimize defects in GaN-based devices.

Ultra-High Purity (5N Al₂O₃)

99.999% purity with trace impurities (Fe, Ti, Si) <5 ppm, ensuring optimal electrical and optical performance.

Diameters: 2", 3", 4", 6", 8" (±0.1 mm tolerance).

Thickness: 100 µm to 1,500 µm (±5 µm tolerance), tailored for specific applications.

Epi-ready polish: Ra <0.5 nm (front side) for defect-free thin-film deposition.

Thermal stability: Melting point ~2,050°C, suitable for high-temperature processes (MOCVD, MBE).

Optical transparency: >85% transmission (UV to mid-IR: 250 nm–5,000 nm).

Mechanical robustness: 9 Mohs hardness, resistant to chemical etching and abrasion.

Applications of Sapphire Wafer

Optoelectronics

GaN-based LEDs/Laser Diodes: Blue/UV LEDs, micro-LEDs, and VCSELs.

High-power laser windows: CO₂ and excimer laser components.

Power & RF Electronics

HEMTs (High-Electron-Mobility Transistors): 5G/6G power amplifiers and radar systems.

Schottky diodes and MOSFETs: High-voltage devices for electric vehicles.

Industrial & Defense

IR windows and missile domes: High transparency in harsh environments.

Sapphire sensors: Corrosion-resistant covers for industrial monitoring.

Quantum & Research Technologies

Substrates for superconducting qubits (quantum computing).

SPDC (Spontaneous Parametric Down-Conversion) crystals for quantum optics.

Semiconductor & MEMS

SOI (Silicon-on-Insulator) wafers for advanced ICs.

MEMS pressure sensors requiring chemical inertness.

Specifications

Q&A

Q1: Can I request a different off-cut angle (e.g., 0.5° or 2°)?
A2: Yes. Custom off-cut angles (0.2°–5°) are available with ±0.1° tolerance.

Q2: What’s the maximum thickness available?
A6: Up to 1,500 µm (1.5 mm) for mechanical stability in high-stress applications.

Q3: How should wafers be stored to prevent contamination?
A10: Store in cleanroom-compliant cassettes or nitrogen cabinets (20–25°C, humidity <40%).