12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large ... Read More
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials About SiC wafer Silicon carbide wafer is a kind of wide band gap semiconductor ... Read More
Product Description: Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and ... Read More
SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC - support ... Read More
Product Description: 2inch/4inch/6inch Sic Silicon Carbide Substrate 4H-P Type Off axis: 2.0° toward Production Grade Silicon carbide substrate 4H-P type refers to P-type (Positive-type) silicon carbide ... Read More
Product Description: 2inch/4inch/6inch/5.0*5.0 mm/10.0*10.0 mm Sic Silicon Carbide Substrate Type 3C-N On axis: < 111 > ± 0.5° Production Grade Dummy Grade Type 3C-N silicon carbide (SiC) substrate is a ... Read More
Product Description: 2inch 4inch 6inch Sic silicon carbide substrate 6H High P-doped Type Off axis: 4.0°toward Prime Grade Dummy Grade Silicon carbide (SiC) is a compound semiconductor material composed of ... Read More
Product Description: Silicon carbide wafer Sic 6H-P type Off axis: 2.0° toward Production Grade Research Grade Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal ... Read More
Product Description: Sic Silicon carbide substrate 6H-P type on axis 0° Mohs Hardness 9.2 for laser device 6H-P type silicon carbide substrate is a semiconductor material grown by a special process. Its crystal ... Read More
Product Description: Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward Zero Grade For temperature sensor 4H-P silicon carbide (SiC) substrate is a high performance semiconductor material with a ... Read More