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SiC Substrate

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China 8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization factory

8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization

8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization Product introduction SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and ... Read More
2025-02-07 15:10:22
China 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm  Prime Grade Research Grade factory

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More
2025-01-24 15:29:41
China Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics factory

Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics

Product Description: Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, ... Read More
2025-01-24 15:04:24
China 2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade factory

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Product Description: 2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade Silicon carbide (SiC), commonly referred to as silicon carbide, is a compound formed ... Read More
2025-01-24 14:50:41
China 6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade factory

6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications and radar systems Diameter 150mm Prime Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material ... Read More
2025-01-24 14:33:00
China Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production  Grade factory

Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

Product Description Sic 3C-N Type Size Machining Conductive Type for Radar Systems Zero MPD Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical and ... Read More
2025-01-24 13:46:57
China Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips factory

Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

Product Description Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips A silicon carbide chip is a semiconductor device made of silicon carbide (SiC) ... Read More
2025-01-24 13:18:58
China 6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade factory

6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade 4H-P silicon carbide (SiC) is an important semiconductor material ... Read More
2025-01-24 11:11:23
China 2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm factory

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power ... Read More
2024-12-05 15:52:17
China 3inch HPSI Silicon Carbide SiC Substrate Thickness 500um Prime Grade Dummy Grade Research Grade Translucent factory

3inch HPSI Silicon Carbide SiC Substrate Thickness 500um Prime Grade Dummy Grade Research Grade Translucent

3inch HPSI Silicon Carbide SiC Substrate Thickness 500um Prime Grade Dummy Grade Research Grade Translucent About HPSI HPSI SiC wafer is an advanced semiconductor material, which is widely used in electronic ... Read More
2024-12-05 11:57:00
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