Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: SiC 3C-N
Payment & Shipping Terms
Price: by case
Payment Terms: T/T
Supply Ability: 1000pc/month
Polytype: |
3C-N |
Mohs Hardness: |
≈9.2 |
Density: |
2.36 G/cm3 |
Resistivity: |
≤0.1 Ω.cm |
Surface Orientation: |
On Axis:〈111〉± 0.5° |
Roughness: |
Polish Ra≤1 Nm |
Packaging: |
Multi-wafer Cassette Or Single Wafer Container |
Application: |
Uv LED And Laser Diode |
Polytype: |
3C-N |
Mohs Hardness: |
≈9.2 |
Density: |
2.36 G/cm3 |
Resistivity: |
≤0.1 Ω.cm |
Surface Orientation: |
On Axis:〈111〉± 0.5° |
Roughness: |
Polish Ra≤1 Nm |
Packaging: |
Multi-wafer Cassette Or Single Wafer Container |
Application: |
Uv LED And Laser Diode |
Type 3C-N silicon carbide (SiC) substrate is a semiconductor material with a cubic crystal structure, where "3C" stands for its cubic crystal system, while "N-type" refers to an N-type semiconductor formed by incorporating nitrogen (N) atoms. This substrate material plays an important role in the semiconductor industry, especially in applications where high temperature, high pressure and high frequency performance are strictly required.
Silicon carbide (SiC) substrate is the core material of recently developed wide band gap semiconductor, which is mainly used in microwave electronics, power electronics and other fields. It is the front end of the wide bandgap semiconductor industry chain and is the basic and key material. Silicon carbide substrates have a variety of crystal structures, the most common of which are hexagonal α-SiC (such as 4H-SiC, 6H-SiC) and cubic β-SiC (i.e. 3C-SiC).
1. High electron mobility: 3C-SiC has a relatively high electron mobility, which gives it an advantage in processing high-speed electronic signals. Specifically, its electron mobility can reach about 1100 cm^2/V·s, which is much higher than traditional semiconductor materials such as silicon.
2. Smaller band gap: Compared with other crystalline types of silicon carbide such as 4H-SiC and 6H-SiC, 3C-SiC has a smaller band gap (about 2.36 eV). This feature enables the 3C-SiC device to have a smaller FN tunneling current and higher reliability in the oxide layer preparation, which helps to improve the yield of the device product.
3. High thermal conductivity: silicon carbide materials generally have high thermal conductivity, and 3C-SiC is no exception. High thermal conductivity helps to better dissipate heat in high-power applications, reducing heat accumulation and reducing dependence on cooling systems, thereby significantly improving device efficiency and reliability.
4. High breakdown electric field: The breakdown electric field strength of 3C-SiC is also relatively high, and it can withstand high voltages without breakdown. This characteristic makes it have potential application value in high voltage power electronics.
6 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级Grade |
精选级(Z 级) Zero MPD Production Grade (Z Grade) |
工业级(P 级) Standard Production Grade (P Grade) |
测试级(D 级) Dummy Grade (D Grade) |
||
| 直径 Diameter | 145.5 mm~150.0 mm | ||||
| 厚度 Thickness | 350 μm ± 25 μm | ||||
| 晶片方向 Wafer Orientation |
- Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N |
||||
| 微管密度 ※ Micropipe Density | 0 cm-2 | ||||
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P |
- {1010} ± 5.0° |
|||
| 3C-N |
- {110} ± 5.0° |
||||
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| 次定位边长度 Secondary Flat Length | 18.0 mm ± 2.0 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 6 mm | |||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※ Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
1. Power electronics:
· SiC MOSFETs: Type 3C-N silicon carbide substrates can be used to manufacture SiC MOSFETs (silicon nitride metal oxide field effect transistors), which perform well in high voltage, high current, fast switching applications. Compared to traditional silicon MOSFETs, SiC MOSFETs have lower on-and-off losses and switching losses, and can operate stably at higher temperatures and voltages.
· SiC diodes: 3C-SiC substrates can also be used to manufacture SiC diodes, which can greatly improve the switching speed and overall system conversion efficiency in HVDC power supplies, inverters and other systems.
2. Rf and Communication Devices:
· SiC HEMT: In RF power amplifiers, type 3C-N silicon carbide substrates can be used to manufacture SiC HEMTs (high electron mobility transistors). SiC HEMT can work stably at extremely high frequencies and is suitable for high-speed data transmission scenarios such as 5G communications and satellite communications. At the same time, its low loss characteristics help reduce energy consumption and improve network performance.
3. Automotive Electronics:
· Electric vehicles and autonomous driving: With the development of electric vehicles and autonomous driving technology, there is a growing demand for high power density, excellent thermal management capabilities, and long-life electronics. Because of its high temperature stability, high thermal conductivity and radiation resistance, 3C-N SIC substrate has a wide range of applications in electric vehicle power conversion systems, battery management systems (BMS), on-board chargers and inverters, and sensing sensors for autonomous driving systems.
4. Optoelectronic devices:
· Uv leds and laser diodes: In UV leds and laser diodes, the 3C-SiC substrate provides better light output efficiency and thermal conductivity, thereby optimizing the optical performance and reliability of the device. This makes 3C-SiC potentially useful in areas such as sterilization, air purification, medical detection, and laser technology.
1. Q: What are the advantages of SIC substrate type 3C-N in the field of power electronics?
A: In the field of power electronics, silicon carbide substrate type 3C-N has low resistivity and high electron mobility, which can significantly reduce power losses and improve the switching speed and efficiency of the device.
2. Q: What is the difference between 3C-SiC and other crystalline silicon carbide?
A: 3C-SiC is the only silicon carbide crystal form with a cubic lattice structure, which has higher electron mobility compared to the common 4H and 6H crystals, but the crystal stability is relatively poor and the defect density is higher.
Tag: #Sic, #Silicon carbide, #Silicon carbide wafer 3C-N type, #3C crystal type, #Sic N-type conduction, #Sic type 4H/6H-P,3C-N
