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6-inch Silicon Carbide Ingot with High Breakdown Field, Thermal Conductivity, and Wide Bandgap Energy for Power Electronics
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12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic
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SiC Dummy Wafer for Semiconductor Process Stabilization & Equipment Conditioning
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Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
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4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
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6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication
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High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole Diameter and Multiple Resistivity Options for Semiconductor Plasma Systems
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Precision Silicon Ring (Si Ring) for Semiconductor Plasma Etching Systems in Single Crystal and Polycrystalline Silicon
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6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices
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Lithium Tantalate on Insulator (LTOI) Wafers for TC-SAW Filters and 5G RF Front-End Applications
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2inch Diameter 50.8 Mm 4H-N Type SiC Epitaxial Wafer For High-Temperature Sensors