High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole Diameter and Multiple Resistivity Options for Semiconductor Plasma Systems
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Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
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Sic Crystal Growth Furnace PVT LPE HT-CVD High Quality Sic Single Crystal Growth Method
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6" High Purity Silicon Carbide 4H-Semi SIC Dummy Grade Semiconductor Wafers LED 5G AR Glasses Optical Grade
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SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot
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High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate
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Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm
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Silicon Carbide (SiC) Substrate Option For High Standard Industrial Applications
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4H-SEMI SiC Substrate Cutting Disc Dia 10mm Thickness 5mm <0001> High Hardness