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prime 2" 3" 4" 6" 4h-Semi 4H-N Insulating Sic substrate Silicon Carbide sic wafer
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prime 2" 3" 4" 6" 4h-Semi 4H-N Insulating Sic substrate Silicon Carbide sic wafer

Place of Origin china
Brand Name zmkj
Model Number high purity un-doped 4h-semi
Product Details
Silicon Carbide Crystal
3inch Or 4inch
0° Off C-axis
High Light: 

0.5mm semi insulating sic


Hexagonal Xsemi insulating sic


SIC silicon carbide wafer

Product Description

prime 2" 3" 4" 6" 4h-Semi 4H-N Insulating Sic substrate Silicon Carbide sic wafer



Silicon Carbide SiC crystal substrate wafer carborundum



Product Name: Silicon carbide (SiC) crystal substrate
Product Description: 2-6inch 
Technical parameters:
Cell structure Hexagonal
Lattice constant a = 3.08 Å c = 15.08 Å
Priorities ABCACB (6H)
Growth method MOCVD
Direction Growth axis or Partial (0001) 3.5 °
Polishing Si surface polishing
Bandgap 2.93 eV (indirect)
Conductivity type N or seimi ,high purity
Resistivity 0.076 ohm-cm
Permittivity e (11) = e (22) = 9.66 e (33) = 10.33
Thermal conductivity @ 300K 5 W / cm. K
Hardness 9.2 Mohs
Specifications: 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A
Standard Packaging: 1000 clean room, 100 clean bag or single box packaging


Application of silicon carbide in power device industry

Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV                                  1.12 3.26 3.41
Breakdown electric field MV/cm      0.23 2.2 3.3
Electron mobility cm^2/Vs             1400 950 1500
Drift speed 10^7 cm/s                     1 2.7 2.5
Thermal conductivity W/cmK             1.5 3.8 1.3
Compared with silicon (Si) devices, silicon carbide (SiC) power devices can effectively achieve high efficiency, miniaturization and light weight of power electronic systems. The energy loss of silicon carbide power devices is only 50% of that of Si devices, the heat generation is only 50% of that of silicon devices, and it has a higher current density. At the same power level, the volume of silicon carbide power modules is significantly smaller than that of silicon power modules. Taking the intelligent power module IPM as an example, using silicon carbide power devices, the module volume can be reduced to 1/3 to 2/3 of silicon power modules.
There are 3 types of silicon carbide power diodes: Schottky diodes (SBD), PIN diodes and junction barrier control Schottky diodes (JBS). Due to the Schottky barrier, SBD has a lower junction barrier height, so SBD has the advantage of low forward voltage. The emergence of silicon carbide SBD increased the application range of SBD from 250V to 1200V. At the same time, its high temperature characteristics are good, from room temperature to 175°C limited by the shell, the reverse leakage current hardly increases. In the application field of rectifiers above 3kV, silicon carbide PiN and silicon carbide JBS diodes have attracted attention due to their higher breakdown voltage, faster switching speed, smaller volume and lighter weight than silicon rectifiers.
SiC crystal is an important wide-bandgap semiconductor material. Because of its high thermal conductivity, high electron drift rate, high breakdown field strength and stable physical and chemical properties, it is widely used in high temperature, In high frequency and high power electronic devices. There are more than 200 types of SiC crystals that have been discovered so far. Among them, 4H- and 6H-SiC crystals have been commercially supplied. They all belong to the 6mm point group and have a second-order nonlinear optical effect. Semi-insulating SiC crystals are visible and medium. The infrared band has a higher transmittance. Therefore, optoelectronic devices based on SiC crystals are very suitable for applications in extreme environments such as high temperature and high pressure. Semi-insulating 4H-SiC crystal has been proved to be a new type of mid-infrared nonlinear optical crystal. Compared with commonly used mid-infrared nonlinear optical crystals, SiC crystal has a wide band gap (3.2eV) due to the crystal. , High thermal conductivity (490W/m·K) and large bond energy (5eV) between Si-C, making SiC crystal have a high laser damage threshold. Therefore, semi-insulating 4H-SiC crystal as a nonlinear frequency conversion crystal has obvious advantages in outputting high-power mid-infrared laser. Thus, in the field of high-power lasers, SiC crystal is a nonlinear optical crystal with broad application prospects. However, the current research based on the nonlinear properties of SiC crystals and related applications is not yet complete. This work takes the nonlinear optical properties of 4H- and 6H-SiC crystals as the main research content, and aims to solve some basic problems of SiC crystals in terms of nonlinear optical properties, so as to promote the application of SiC crystals in the field of nonlinear optics. A series of related work has been carried out theoretically and experimentally. The main research results are as follows:    First, the basic nonlinear optical properties of SiC crystals are studied. The variable temperature refraction of 4H- and 6H-SiC crystals in the visible and mid-infrared bands (404.7nm~2325.4nm) was tested, and the Sellmier equation of variable temperature refractive index was fitted. The single oscillator model theory was used to calculate the dispersion of the thermo-optical coefficient. A theoretical explanation is given; the influence of the thermo-optic effect on the phase matching of 4H- and 6H-SiC crystals is studied. The results show that the phase matching of 4H-SiC crystals is not affected by temperature, while 6H-SiC crystals still cannot achieve temperature phase matching. condition. In addition, the frequency doubling factor of semi-insulating 4H-SiC crystal was tested by the Maker fringe method.   Second, the femtosecond optical parameter generation and amplification performance of 4H-SiC crystal is studied. The phase matching, group velocity matching, best non-collinear angle and best crystal length of 4H-SiC crystal pumped by 800nm ​​femtosecond laser are theoretically analyzed. Using the femtosecond laser with a wavelength of 800nm ​​output by the Ti:Sapphire laser as the pump source, using two-stage optical parametric amplification technology, using a 3.1mm thick semi-insulating 4H-SiC crystal as a nonlinear optical crystal, under 90° phase matching, For the first time, a mid-infrared laser with a center wavelength of 3750nm, a single pulse energy up to 17μJ, and a pulse width of 70fs was obtained experimentally. The 532nm femtosecond laser is used as the pump light, and the SiC crystal is 90° phase-matched to generate signal light with an output center wavelength of 603nm through optical parameters. Third, the spectral broadening performance of semi-insulating 4H-SiC crystal as a nonlinear optical medium is studied. The experimental results show that the half-maximum width of the broadened spectrum increases with the crystal length and the laser power density incident on the crystal. The linear increase can be explained by the principle of self-phase modulation, which is mainly caused by the difference of the refractive index of the crystal with the intensity of the incident light. At the same time, it is analyzed that in the femtosecond time scale, the nonlinear refractive index of SiC crystal may be mainly attributed to the bound electrons in the crystal and the free electrons in the conduction band; and the z-scan technology is used to preliminarily study the SiC crystal under 532nm laser. Non-linear absorption and non-linear refractive index performance.

2. substrates size of standard

4 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 76.2 mm±0.3 mm or 100±0.5mm;
Thickness 500±25um 
Wafer Orientation 0° off (0001)axis
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤15 cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E7 Ω·cm
Primary Flat and length {10-10}±5.0° ,32.5 mm±2.0 mm
Secondary Flat Length 18.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 3 mm
TTV/Bow /Warp ≤15μm /≤25μm /≤40μm
Roughness Polish Ra≤1 nm ,CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%

Sic wafer & ingots  2-6inch and other customized size   also can be provided.


3.Products detail display

prime 2" 3" 4" 6" 4h-Semi  4H-N Insulating Sic substrate Silicon Carbide sic wafer 0

prime 2" 3" 4" 6" 4h-Semi  4H-N Insulating Sic substrate Silicon Carbide sic wafer 1prime 2" 3" 4" 6" 4h-Semi  4H-N Insulating Sic substrate Silicon Carbide sic wafer 2



Delivery & Package

prime 2" 3" 4" 6" 4h-Semi  4H-N Insulating Sic substrate Silicon Carbide sic wafer 3

  • Q1. Is your company a factory or trade company?
  • We are the factory and we also can do export ourself.
  • Q2.Is you company only work with sic  business?
  • yes; however we don‘t grow the sic crystal by self. 
  • Q3. Could you supply sample?
  • Yes,we can supply sapphire sample according to customer's requirement
  • Q4. Do you have any stock of sic wafers ?
  • we usually keep some standard size sic wafers from 2-6inch wafers  in stock
  • Q5.Where is your company located.
  • Our company located in shanghai ,China.
  • Q6. How long will take to get the products.
  • Generally it will take 3~4 weeks to process.It is depend on the and the size of the  products.


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Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
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