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sic substrat

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2inch Diameter 50.8 Mm 4H-N Type SiC Epitaxial Wafer For High-Temperature Sensors
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2inch SiC epitaxial wafer 4H overview 2inch Diameter 50.8 mm 4H-N Type SiC Epitaxial Wafer for High-Temperature Sensors ZMSH is a globally leading provider of silicon carbide semiconductor material solutions, ... Read More

2025-07-01 13:16:40

4Inch Sic Silicon Carbide Wafer 6H-P Type Thickness 350μm Zero / Prime Grade Dummy Grade
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Product Description: 4Inch Sic Silicon Carbide Wafer 6H-P Type Thickness 350m Zero grade Prime grade Dummy grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal ... Read More

2024-09-29 11:29:00

4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
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4inch SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350m Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial ... Read More

2025-07-01 13:16:40

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade
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Product Description: 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350m Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More

2024-10-11 10:35:00

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade
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Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 m Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More

2025-01-24 15:29:41

55mm/1010mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade
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Product Description: 5*5mm/10*10mm Silicon Carbide Wafer Thickness 350m Sic 3C-N Type High Mechanical Strength Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good ... Read More

2024-10-11 10:33:11

SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
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Abstract of SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconduc... Read More

2025-05-26 11:39:21

2" InSb-Te EPI Substrates Narrow Band Semiconductor Substrates Hall Components
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2 InSb-Te EPI Substrates Narrow Band Gap Semiconductor Substrates Hall Components Description of InSb-Te: Indium antimonide (InSb), as a kind of group -V binary compound semiconductor material, has been the ... Read More

2023-11-27 17:03:31

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm
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2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power ... Read More

2024-12-05 15:52:17

Customized Size Silicon Carbide Substrate Hardness 9.4 Sic Parts For Equipment
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10x10mm 5x5mm customized square sic substrates ,1inch sic wafers,sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer ----------------------------------------------... Read More

2024-09-13 15:02:55

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