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2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm
  • 2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm
  • 2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm
  • 2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

Place of Origin Shanghai China
Brand Name ZMSH
Certification ROHS
Model Number Silicon Carbide Wafer
Product Details
SiC Single Crystal 4h-N
Production Grade
2 Inch
High Light: 

MOS Device SIC Silicon Carbide Wafer


2inch SIC Silicon Carbide Wafer


4H-N Type Silicon Carbide Wafer

Product Description

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

Product introduction

The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power electronic devices, radiofrequency (RF) devices, and optoelectronic devices. This article presents a comprehensive overview of the manufacturing techniques, structural characteristics, application areas, and ongoing research advancements related to the 4H n-type Silicon Carbide single crystal substrate.

To begin, various methods for preparing the 4H n-type Silicon Carbide single crystal substrate are discussed. These methods include Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), and Laser Assisted Separation (LAS). Each technique has an impact on the crystal quality, surface morphology, and cost-effectiveness of the substrate.

Next, the article explores the structural characteristics of the 4H n-type Silicon Carbide single crystal substrate. This includes an analysis of the crystal structure, distribution of impurity concentrations, and types of defects present. High-quality 4H n-type Silicon Carbide single crystal substrates exhibit superior crystal quality and lower impurity concentrations, which are crucial for enhancing device performance.

The applications of the 4H n-type Silicon Carbide single crystal substrate in power electronic devices, RF devices, and optoelectronic devices are then discussed. The substrate's exceptional thermal stability, electrical properties, and wide bandgap make it highly suitable for various devices.

Finally, the article summarizes the current research progress on 4H n-type Silicon Carbide single crystal substrates and outlines future directions. As semiconductor technology continues to advance, the 4H n-type Silicon Carbide single crystal substrate is expected to play a pivotal role in a broader range of applications, supporting the improvement and innovation of electronic devices.

Product parameter

Zero MPD Grade
Production Grade
Research Grade
Dummy Grade
1000±25um Or other customized thickness
Wafer Orientation
Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density
≤0 cm-2
≤2 cm-2
≤5 cm-2
≤30 cm-2
Resistivity 4H-N
0.015~0.028 Ω•cm
Resistivity 4/6H-SI
≥1E7 Ω·cm
Primary Flat
{10-10}±5.0° or round shape
Primary Flat Length
18.5 mm±2.0 mm or round shape
Secondary Flat Length
10.0mm±2.0 mm
Secondary Flat Orientation
Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion
1 mm
TTV/Bow /Warp
≤10μm /≤10μm /≤15μm

Product display

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm 0

Product key features

Silicon Carbide (SiC) has emerged as a revolutionary material in the realm of semiconductor technology, and the 4H n-type SiC substrate stands out as a pivotal component with distinctive features. This substrate, characterized by its hexagonal crystal structure and n-type conductivity, exhibits a multitude of key features that contribute to its widespread utilization in various electronic applications.

  • Hexagonal Crystal Structure:

The 4H SiC substrate possesses a hexagonal crystal lattice arrangement, a structural attribute that imparts unique electrical and thermal properties to the material. This crystal structure is crucial for achieving high-performance electronic devices.

  • High Electron Mobility:

One of the standout features of the 4H n-type SiC substrate is its exceptional electron mobility. This property allows for faster charge carrier movement within the material, contributing to the substrate’s efficiency in high-frequency and high-power applications.

  • Wide Bandgap:

The wide bandgap of SiC, a result of its hexagonal crystal structure, is a key feature that enhances the substrate’s performance. The wide bandgap allows for the creation of devices capable of operating at elevated temperatures and in harsh environments.

  • N-Type Conductivity:

The 4H SiC substrate is specifically doped to exhibit n-type conductivity, meaning it has an excess of electrons as charge carriers. This type of doping is essential for certain semiconductor device applications, including power electronics and RF devices.

  • High Breakdown Voltage:

The material’s inherent ability to withstand high electric fields without breakdown is a critical feature for power devices. The 4H n-type SiC substrate’s high breakdown voltage is instrumental in ensuring the reliability and durability of electronic components.

  • Thermal Conductivity:

SiC substrates demonstrate excellent thermal conductivity, making them well-suited for applications where efficient heat dissipation is crucial. This feature is particularly advantageous in power electronic devices, where minimizing thermal resistance is essential.

  • Chemical and Mechanical Stability:

The 4H n-type SiC substrate exhibits robust chemical and mechanical stability, making it suitable for applications in harsh operating conditions. This stability contributes to the substrate’s longevity and reliability in various environments.

  • Optical Transparency:

In addition to its electronic properties, the 4H SiC substrate also possesses optical transparency in specific wavelength ranges. This property is advantageous for applications such as optoelectronics and certain sensor technologies.

  • Versatility in Device Fabrication:

The unique combination of the 4H SiC substrate’s properties allows for the fabrication of diverse electronic devices, including power MOSFETs, Schottky diodes, and high-frequency RF devices. Its versatility contributes to its widespread adoption in different technological domains.

  • Advancements in Research and Development:

Continuous research and development efforts in the field of SiC technology are leading to advancements in the key features of 4H n-type SiC substrates. Ongoing innovations aim to further enhance performance, reliability, and the range of applications for these substrates.

In conclusion, the 4H n-type SiC substrate serves as a cornerstone in the evolution of semiconductor technology, offering a spectrum of key features that make it indispensable for high-performance electronic devices. Its hexagonal crystal structure, high electron mobility, wide bandgap, and other distinctive attributes position it as a leading material for advancing technologies in power electronics, RF devices, and beyond.









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