logo
SHANGHAI FAMOUS TRADE CO.,LTD
Home ProductsSemiconductor Equipment

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​

All Products
Gallium Nitride Wafer (35)
Sapphire Wafer (87)
SiC Substrate (131)
Sapphire Optical Windows (76)
IC Silicon Wafer (22)
Synthetic Sapphire Rod (12)
Fused Quartz Plate (40)
Sapphire Parts (114)
Synthetic Gemstone (72)
Semiconductor Equipment (55)
LiNbO3 Wafer (18)
GaAs Wafer (24)
Indium Phosphide Wafer (34)
Ceramic Substrate (25)
Lab Wrapper (31)
I'm Online Chat Now

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​
​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ ​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ ​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ ​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​

Large Image :  ​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​

Product Details:
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Wafer Orientation Instrument
Payment & Shipping Terms:
Minimum Order Quantity: 3
Price: by case
Packaging Details: package in 100-grade cleaning room
Delivery Time: 3-6 months
Payment Terms: T/T
Supply Ability: 1000pcs per month
Contact Now
Detailed Product Description
X-ray System​​: X-ray Tube Sample Size: Wafer: 2–12 Inch; Ingot: ≤200 Mm (diameter) × 500 Mm (length)
Angular Range: θ: -10° To +50°, 2θ: -10° To +110° Orientation Accuracy: ±10″–±30″ (high-precision Models: ±3″)
Multi-axis Motion: X/Y/Z-axis Positioning, 360° Rotation ±15°, Tilt Control Scanning Speed: Full Orientation In 10 Sec (fully Automated)
Applications: ​​Semiconductor Manufacturing​​, Optical Material Processing​​
Highlight:

Cutting Angle Determination Wafer Orientation Instrument

,

High Precision Wafer Orientation Instrument

 Wafer Orientation Instrument Equipment Overview​

  

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ 0

 

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​

 

 

A wafer orientation instrument is a high-precision device based on ​​X-ray diffraction (XRD)​​ technology, designed for semiconductor and optical material industries to determine crystal lattice orientation and cutting angles. Its core components include:

 

  • ​​X-ray Generation System​​: Copper or molybdenum target X-ray tubes with focal spot size 0.4×1 mm, tube voltage 30–50 kV, and tube current 0–5 mA.
  • ​​Goniometer​​: Dual-axis (Ω-θ) linkage design supporting ±0.001° angular resolution and rocking curve analysis.
  • ​​Sample Stage​​: V-groove or planar alignment structure, compatible with 2–12-inch wafers and large ingots (≤20 kg).
  • ​​Automation Module​​: Stacking device for simultaneous positioning of 12 ingots, enhancing production efficiency.

 

 

 

Comprehensive Technical Specifications of Wafer Orientation Instrument


 

​​Parameter Category​​ ​​Parameter​​ ​​Specifications/Description​​
​​X-ray System​​


 		 X-ray Tube Copper (Cu) target, focal spot 0.4×1 mm, air-cooled
X-ray Voltage/Current 30 kV, 0–5 mA adjustable
Detector Type Geiger-Müller tube (low energy) or scintillation counter (high energy)
Time Constant 0.1/0.4/3 sec adjustable
​​Goniometer​​



 		 Sample Size Wafer: 2–12 inch; Ingot: ≤200 mm (diameter) × 500 mm (length)
Angular Range θ: -10° to +50°, 2θ: -10° to +110°
Orientation Accuracy ±10″–±30″ (high-precision models: ±3″)
Angular Resolution Minimum reading: 1″ (digital) or 10″ (scale)
Scanning Speed Full orientation in 10 sec (fully automated)
​​Automation & Control​​

 		 Sample Stage V-groove (2–8 inch wafers), edge/OF alignment, 1–50 kg capacity
Multi-axis Motion X/Y/Z-axis positioning, 360° rotation ±15°, tilt control
Interface PLC/RS232/Ethernet, MES-compatible
​​Physical Specifications​​


 		 Dimensions 1130×650×1200 mm (L×W×H)
Weight 150–300 kg
Power Requirements Single-phase 220V±10%, 50/60 Hz, ≤0.5 kW
Noise Level <65 dB (operating)
​​Advanced Features​​

 		 Closed-loop Tension Control Real-time monitoring, 0.1–1.0 MPa tension regulation
AI-driven Optimization Defect detection, predictive maintenance alerts
Multi-material Compatibility Supports cubic (Si), hexagonal (sapphire), and asymmetric crystals (YAG)

 

 

 

Wafer Orientation Instrument Working Principle

 

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ 1

The device operates through ​​X-ray diffraction​​ and ​​Omega scanning​​ technologies:

 

 

​​1. X-ray Diffraction​​:

  • X-rays incident on the crystal surface at Bragg angles generate diffraction signals, enabling calculation of lattice spacing and orientation.
  • Rocking curve scanning evaluates lattice defects and surface strain.

​​

 

2. Omega Scanning​​:

  • The crystal rotates around a fixed axis while X-ray tube and detector remain stationary, dynamically collecting multi-angle diffraction data for full lattice mapping in 5 seconds.
  • Integrated X/Y/Z-axis motion enables 3D crystallographic orientation.

​​

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ 2

3. Automated Control​​:

  • PLC or computer-controlled sample rotation and data acquisition, supporting preset cutting parameters (e.g., 8° or 32° cuts for silicon wafers).

 

 

 

 

 

Wafer Orientation Instrument Key Features & Advantages​

 

 

​​Feature​​

 

​​Description​​

 

​​Technical Parameters/Case Studies​​

 

​​Ultra-High Precision​​

 

Omega scanning accuracy ±0.001°, Rocking Curve FWHM resolution <0.005°

 

Silicon carbide wafer cutting error ≤±0.5°

 

​​High-Speed Measurement

​​

Single-scan acquisition of all crystallographic data, 200× faster than manual

 

Silicon wafer batch testing: 120 wafers/hour

 

​​Multi-Material Compatibility

​​

Supports cubic (Si), hexagonal (sapphire), and asymmetric crystals (YAG)

 

Applicable materials: SiC, GaN, quartz, garnet

 

​​AI Integration​​

 

Deep learning algorithms for defect detection, real-time process optimization

 

Defect sorting reduces scrap rate to <1%

 

​​Modular Design​​

 

Expandable X-Y platform for 3D mapping or EBSD integration

 

Silicon wafer dislocation density detection ≤100 cm⁻²

 

 

 

 

 

Wafer Orientation Instrument Application Fields​

 

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​ 3

1. Semiconductor Manufacturing​​:

  • ​​Silicon Wafer Cutting​​: Determines <100> and <111> orientations, minimizing cutting loss (<5%).
  • ​​Silicon Carbide (SiC) Wafers​​: 8° off-cut process enhances device breakdown voltage, loss rate <10%.

 

2. ​​Optical Material Processing​​:

  • ​​Sapphire Substrates​​: Cuts LED chips with ±0.1° precision to reduce light efficiency loss.
  • ​​YAG Laser Crystals​​: Precise cutting of laser resonator surfaces for superior beam quality.

 

3. ​​High-Temperature Alloys & Ceramics​​:

  • ​​Turbine Blades​​: Nickel-based alloy orientation control improves high-temperature resistance (>1200°C).
  • ​​Zirconia Ceramics​​: Cuts smartphone backplates with thickness uniformity ±0.02 mm.

 

4. ​​Research & Quality Control​​:

  • ​​Crystal Defect Analysis​​: Maps dislocation density via rocking curves (<10³ cm⁻²).
  • ​​New Material R&D​​: Evaluates perovskite solar cell lattice orientation for photovoltaic efficiency.

 

 

 

Wafer Orientation Instrument FAQ

 

 

1. Q: How to calibrate a wafer orientation instrument?​​

​​    A:​​ Calibration involves aligning the X-ray source and detector using reference crystals, typically requiring ​​<0.001° angular accuracy​​ and automated software adjustments for precision.

 

 

​​2. Q: What is the typical accuracy of a wafer orientation instrument?​​

​​    A:​​ High-end models achieve ​​±0.001° precision​​, critical for semiconductor wafer cutting and crystal defect analysis in industries like photovoltaics and advanced ceramics.

 

 

 

Tags: #Wafer Orientation Instrument, #XRD-Based, #Sapphire, #SiC, #High-Precision Cutting, # Angle Determination​​

​

 
 

Tag:

4 inch SiC ingot growing furnace,

8 inch SiC ingot growing furnace,

6 inch SiC ingot growing furnace

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Mr. Wang

Tel: +8615801942596

Send your inquiry directly to us (0 / 3000)

SiC Substrate

High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector

4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors

4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material

Sapphire Wafer

Semiconductor Wafer Custom Sapphire Glass / Sapphire Windows Special Orientation

sapphire wafer Thickness 0.43mm Sapphire Components Customized Size And Orientations

Square Sapphire Wafer / Sapphire Crystal Glass 10x10mm 5x5mm For Optical Lens

2°Off C - Axis Synthetic Sapphire Glass Epi - Ready Substrates 2 Inch Diameter 50.8mm

Gallium Nitride Wafer

Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness

2inch 4inch free-standing GaN Gallium Nitride Substrates Template for led

2INCH 4INCH NPSS/FSS AlN template on sapphire EPI-wafer AlN-On-Sapphire wafer

2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

Request A Quote

E-Mail | Sitemap

Mobile Site
Privacy Policy | China Good Quality Gallium Nitride Wafer Supplier. © 2018 - 2025 SHANGHAI FAMOUS TRADE CO.,LTD. All Rights Reserved.