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XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination

Name: XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination
Brand: SHANGHAI FAMOUS TRADE CO.,LTD
SKU: Wafer Orientation Instrument
Price: 50,002.00 USD
Availability: InStock

Brand Name:	ZMSH
Model Number:	Wafer Orientation Instrument
MOQ:	3
Price:	by case
Delivery Time:	3-6 months
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

CHINA

Certification:

rohs

X-ray System:

X-ray Tube

Sample Size:

Wafer: 2–12 Inch; Ingot: ≤200 Mm (diameter) × 500 Mm (length)

Angular Range:

θ: -10° To +50°, 2θ: -10° To +110°

Orientation Accuracy:

±10″–±30″ (high-precision Models: ±3″)

Multi-axis Motion:

X/Y/Z-axis Positioning, 360° Rotation ±15°, Tilt Control

Scanning Speed:

Full Orientation In 10 Sec (fully Automated)

Applications:

Semiconductor Manufacturing, Optical Material Processing

Packaging Details:

package in 100-grade cleaning room

Supply Ability:

1000pcs per month

Highlight:

Cutting Angle Determination Wafer Orientation Instrument

High Precision Wafer Orientation Instrument

Product Description

Wafer Orientation Instrument Equipment Overview

XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination

A wafer orientation instrument is a high-precision device based on X-ray diffraction (XRD) technology, designed for semiconductor and optical material industries to determine crystal lattice orientation and cutting angles. Its core components include:

X-ray Generation System: Copper or molybdenum target X-ray tubes with focal spot size 0.4×1 mm, tube voltage 30–50 kV, and tube current 0–5 mA.
Goniometer: Dual-axis (Ω-θ) linkage design supporting ±0.001° angular resolution and rocking curve analysis.
Sample Stage: V-groove or planar alignment structure, compatible with 2–12-inch wafers and large ingots (≤20 kg).
Automation Module: Stacking device for simultaneous positioning of 12 ingots, enhancing production efficiency.

Comprehensive Technical Specifications of Wafer Orientation Instrument

Parameter Category	Parameter	Specifications/Description
X-ray System	X-ray Tube	Copper (Cu) target, focal spot 0.4×1 mm, air-cooled
	X-ray Voltage/Current	30 kV, 0–5 mA adjustable
	Detector Type	Geiger-Müller tube (low energy) or scintillation counter (high energy)
	Time Constant	0.1/0.4/3 sec adjustable
Goniometer	Sample Size	Wafer: 2–12 inch; Ingot: ≤200 mm (diameter) × 500 mm (length)
	Angular Range	θ: -10° to +50°, 2θ: -10° to +110°
	Orientation Accuracy	±10″–±30″ (high-precision models: ±3″)
	Angular Resolution	Minimum reading: 1″ (digital) or 10″ (scale)
	Scanning Speed	Full orientation in 10 sec (fully automated)
Automation & Control	Sample Stage	V-groove (2–8 inch wafers), edge/OF alignment, 1–50 kg capacity
	Multi-axis Motion	X/Y/Z-axis positioning, 360° rotation ±15°, tilt control
	Interface	PLC/RS232/Ethernet, MES-compatible
Physical Specifications	Dimensions	1130×650×1200 mm (L×W×H)
	Weight	150–300 kg
	Power Requirements	Single-phase 220V±10%, 50/60 Hz, ≤0.5 kW
	Noise Level	<65 dB (operating)
Advanced Features	Closed-loop Tension Control	Real-time monitoring, 0.1–1.0 MPa tension regulation
	AI-driven Optimization	Defect detection, predictive maintenance alerts
	Multi-material Compatibility	Supports cubic (Si), hexagonal (sapphire), and asymmetric crystals (YAG)

Wafer Orientation Instrument Working Principle

The device operates through X-ray diffraction and Omega scanning technologies:

1. X-ray Diffraction:

X-rays incident on the crystal surface at Bragg angles generate diffraction signals, enabling calculation of lattice spacing and orientation.
Rocking curve scanning evaluates lattice defects and surface strain.

2. Omega Scanning:

The crystal rotates around a fixed axis while X-ray tube and detector remain stationary, dynamically collecting multi-angle diffraction data for full lattice mapping in 5 seconds.
Integrated X/Y/Z-axis motion enables 3D crystallographic orientation.

3. Automated Control:

PLC or computer-controlled sample rotation and data acquisition, supporting preset cutting parameters (e.g., 8° or 32° cuts for silicon wafers).

Wafer Orientation Instrument Key Features & Advantages

Feature

Description

Technical Parameters/Case Studies

Ultra-High Precision

Omega scanning accuracy ±0.001°, Rocking Curve FWHM resolution <0.005°

Silicon carbide wafer cutting error ≤±0.5°

High-Speed Measurement

Single-scan acquisition of all crystallographic data, 200× faster than manual

Silicon wafer batch testing: 120 wafers/hour

Multi-Material Compatibility

Supports cubic (Si), hexagonal (sapphire), and asymmetric crystals (YAG)

Applicable materials: SiC, GaN, quartz, garnet

AI Integration

Deep learning algorithms for defect detection, real-time process optimization

Defect sorting reduces scrap rate to <1%

Modular Design

Expandable X-Y platform for 3D mapping or EBSD integration

Silicon wafer dislocation density detection ≤100 cm⁻²

Wafer Orientation Instrument Application Fields

1. Semiconductor Manufacturing:

Silicon Wafer Cutting: Determines <100> and <111> orientations, minimizing cutting loss (<5%).
Silicon Carbide (SiC) Wafers: 8° off-cut process enhances device breakdown voltage, loss rate <10%.

2. Optical Material Processing:

Sapphire Substrates: Cuts LED chips with ±0.1° precision to reduce light efficiency loss.
YAG Laser Crystals: Precise cutting of laser resonator surfaces for superior beam quality.

3. High-Temperature Alloys & Ceramics:

Turbine Blades: Nickel-based alloy orientation control improves high-temperature resistance (>1200°C).
Zirconia Ceramics: Cuts smartphone backplates with thickness uniformity ±0.02 mm.

4. Research & Quality Control:

Crystal Defect Analysis: Maps dislocation density via rocking curves (<10³ cm⁻²).
New Material R&D: Evaluates perovskite solar cell lattice orientation for photovoltaic efficiency.

Wafer Orientation Instrument FAQ

1. Q: How to calibrate a wafer orientation instrument?

A: Calibration involves aligning the X-ray source and detector using reference crystals, typically requiring <0.001° angular accuracy and automated software adjustments for precision.

2. Q: What is the typical accuracy of a wafer orientation instrument?

A: High-end models achieve ±0.001° precision, critical for semiconductor wafer cutting and crystal defect analysis in industries like photovoltaics and advanced ceramics.

Tags: #Wafer Orientation Instrument, #XRD-Based, #Sapphire, #SiC, #High-Precision Cutting, # Angle Determination

Tags:

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

IC Silicon Wafer

Synthetic Sapphire Rod

Fused Quartz Plate

Sapphire Parts

Synthetic Gemstone

Semiconductor Equipment

LiNbO3 Wafer

GaAs Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

IC Silicon Wafer

Synthetic Sapphire Rod

Fused Quartz Plate

Sapphire Parts

Synthetic Gemstone

Semiconductor Equipment

LiNbO3 Wafer

GaAs Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper

products details

​​XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination​​

Cutting Angle Determination Wafer Orientation Instrument

High Precision Wafer Orientation Instrument

Wafer Orientation Instrument Equipment Overview​

Comprehensive Technical Specifications of Wafer Orientation Instrument

Wafer Orientation Instrument Working Principle

Wafer Orientation Instrument Key Features & Advantages​

Wafer Orientation Instrument Application Fields​

Wafer Orientation Instrument FAQ

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XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination

Wafer Orientation Instrument Equipment Overview

Wafer Orientation Instrument Key Features & Advantages

Wafer Orientation Instrument Application Fields

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