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Material: | AIN Template On Silicon | Orientation: | 111 |
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Polishing: | SSP, DSP | Diameter: | 4'' |
Thickness: | 100nm, 200nm | Application: | Semiconductor Substrates |
Conductivity Type: | N Type | Resisitivity: | 1-100ohm.cm |
Macro Defect Density: | <10/cm^2 | ||
Highlight: | AIN On Semiconductor Wafers,AIN On Silicon Substrates,Aluminum Nitride On Silicon Wafers |
4'' 6'' AIN On Silicon Substrates SSP DSP Semiconductor Wafers 100nm 200nm Layer
Description:
Aluminum Nitride on Silicon Wafers is a new type of semiconductor material that offers unique properties. The aluminum nitride ceramic has a low dielectric constant and excellent mechanical properties. It is non-toxic and has a linear expansion coefficient similar to that of silicon. In addition, it has low thermal conductivity. This combination of properties makes aluminum nitride an ideal material for many electronic applications. A thin film of aluminum nitride is a form of semiconductor material. It is highly conductivealuminum nitride on silicon wafers and can withstand high temperatures. It is also resistant to electromagnets and has a high boiling point. As a result, it is commonly used in mobile phones and other electronics. However, it is not advisable to process Aluminum Nitride on Silicon Wafers without proper annealing.
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Company Introduction:
Contact Person: Mr. Wang
Tel: +8615801942596