Undoped 10X10mm M-Axis HVPE GAN Wafers For semiconducting
|Material||GaN Single Crystal||Method||HVPE|
|Size||Customized Size 10x10||Thickness||350um|
|Package||Single Wafer Cassette Case Package By Vacuum Condition||Type||N-type|
|Doping||Si-doped Or Un-doped||Orientation||M-axis|
HVPE GAN wafers,
M axis GAN wafers,
undoped GaN single crystal
2inch free-standing GaN substrates,GaN wafer for LD, semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer,
Hydride Vapor Phase Epitaxy (HVPE) is a process that can produce single crystal GaN. It is used for the growth of GaN substrates because of the high growth rate and high quality that can be attained. In this process, HCl gas is reacted with liquid gallium metal, which forms GaCl gas. Then the GaCl reacts with NH₃ gas at about 1,000 °C to form the solid crystal of GaN. Eta Research has developed our own HVPE equipment with the goal to cost effectively scale the production of GaN wafers.
Presently, the vast majority of GaN-based devices use foreign substrates such as Al₂O₃ and Si. Although foreign substrates are good for some applications, the dissimilar material causes defects to be placed in the GaN device layers as material is deposited. The defects can reduce the performance.
GaN substrates, especially with low defect density, offer the best choice for deposition of GaN device layers. Use of GaN substrates will improve the efficiency, power density, and other performance metrics of GaN devices.
|Dimensions||Ф 100mm ± 1mm|
|Marco Defect Density||A Level||≤ 2 cm-2|
|B Level||> 2 cm-2|
|Thickness||450 ± 25 µm|
|Orientation||C-axis(0001) ± 0.5°|
|Orientation Flat||(1-100) ± 0.5°, 32.0 ± 1.0mm|
|Secondary Orientation Flat||(11-20) ± 3°, 18.0 ± 1.0mm|
|TTV(Total Thickness Variation)||≤30 µm|
|Resistivity(300K)||< 0.5 Ω·cm|
|Dislocation Density||Less than 5x106 cm-2|
|Useable Surface Area||> 90%|
Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
|Package||Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.|
or by customzied size
2. Our Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life and high stability LDs, high power and high reliability micro-wave devices, High brightness and high efficiency, energy-saving LED.
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.
Q: What's the MOQ?
(1) For inventory, the MOQ is 1pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.
Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.