SHANGHAI FAMOUS TRADE CO.,LTD 86-1580-1942596 eric_wang@zmsh-materials.com
4inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers

4inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers

  • High Light

    6inch EPI Wafers

    ,

    GaN-ON-SiC EPI Wafers

    ,

    EPI Layers Gallium Nitride Wafer

  • Material
    GaN-on-Sic
  • Industry
    Semiconductor Wafer,LED
  • Application
    Semiconductor Device,LD Wafer,LED Wafer, Explorer Detector,laser,
  • TYPE
    Epi Wafers
  • Customized
    Ok
  • Size
    Commen 2inchx0.35mmt
  • Thickness
    350±50um
  • Layer
    1-25UM
  • Dislocation Density
    <1E7cm-2
  • Place of Origin
    CHINA
  • Brand Name
    zmsh
  • Certification
    ROHS
  • Model Number
    GaN-ON-SIC
  • Minimum Order Quantity
    1pcs
  • Price
    by case
  • Packaging Details
    single wafer case in 100-grade cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    L/C, , T/T
  • Supply Ability
    10PCS/month

4inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers

 

 

4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers

 

About GaN-on-GaN  GaN-on-SIC  Feature Introduce

 

GaN epitaxial wafer: According to the different substrates, it is mainly divided into four types: GaN-on-Si, GaN-on-SiC, GaN-on-sapphire, and GaN-on-GaN.
     

    GaN-on-Si: The current industry production yield is low, but there is a huge potential for cost reduction: because Si is the most mature, defect-free, and lowest-cost substrate material; at the same time, Si can be expanded to 8-inch wafer fabs , reduce the unit production cost, so that the wafer cost is only one percent of that of the SiC base; the growth rate of Si is 200 to 300 times that of the SiC crystal material, and the corresponding fab equipment depreciation and energy consumption difference in cost, etc. GaN-on-Si epitaxial wafers are mainly used in the manufacture of power electronic devices, and the technical trend is to optimize large-scale epitaxy technology.
   

   GaN-on-SiC: Combining the excellent thermal conductivity of SiC with the high power density and low loss capabilities of GaN, it is a suitable material for RF. Limited by the SiC substrate, the current size is still limited to 4 inches and 6 inches, and 8 inches has not been promoted. GaN-on-SiC epitaxial wafers are mainly used to manufacture microwave radio frequency devices.
       

GaN-on-sapphire: Mainly used in the LED market, the mainstream size is 4 inches, and the market share of GaN LED chips on sapphire substrates has reached more than 90%.

 

     GaN-on-GaN: The main application market of GaN using homogenous substrates is blue/green lasers, which are used in laser display, laser storage, laser lighting and other fields.
    
       GaN device design and manufacturing: GaN devices are divided into radio frequency devices and power electronic devices. Radio frequency device products include PA, LNA, switches, MMICs, etc., which are oriented to base station satellite, radar and other markets; power electronic device products include SBD, normally-off FET. , Normally-on FET, Cascode FET and other products for wireless charging, power switch, envelope tracking, inverter, converter and other markets.
According to the process, it is divided into two categories: HEMT, HBT radio frequency process and SBD, PowerFET power electronic device process.

 

Applications

  1. - Various LED's: white LED, violet LED, ultraviolet LED, blue LED
  2. - Environmental detection
  3. Substrates for epitaxial growth by MOCVD etc
  4. - Laser diodes: violet LD, green LD for ultra small projectors.
  5. - Power electronic devices
  6. - High frequency electronic devices
  7. Laser Projection Display, Power Device, etc.
  8. Date storage
  9. Energy-efficient lighting
  10. High- Efficiency Electronic devices
  11. New energy solor hydrogen technology
  12. Light source terahertz band

Specifications for GaN-on-GaN Substrates for  Each Grade

 

 

4-6”GaN ON-SIC 
Item Type: N-type SIC
Dimensions  size Ф 100.0mm ± 0.5mm
Thickness  of Substrate 350 ± 30 µm
Orientation of Substrate  4°off C-axis(0001) 
Polish  DSP 
Ra <0.2nm
Epilyaer structure  0.5um pGaN/20um iGaN/2um nGaN/FS-GaN
Epi thickness/STD 1~25um/<3%
Roughness <0.5nm
Discolation density <1X107cm-2
pGaN Carrier concentration >1E17CM-3; 
iGaN Carrier concentration > 1E17CM-3;
nGaN Carrier concentration >1E17CM-3;
 
Useable area P level>90%; R level>80%: Dlevel>70%(edge and macro defects exclusion)

 

4inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers 04inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers 1

4inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers 2

Our services

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable. 

5. Speed and precious delivery.

 

FAQ

Q: Is there any stock or standard product?

A: Yes, commen size as like2inch 0.3mm standard size always in stocks.

 

Q: How about the samples policy?

A: sorry, but suggest you can buy some 10x10mm size back for test firstly.

 

Q: If i place an order now ,how long would it be before i got delivery ?

A: standard size in  stock  in 1weeks can be expressed after payment.

 and our payment term is 50% deposit and left before delivery.

4inch 6inch Gallium Nitride Wafer GaN-ON-SiC EPI Wafers 3