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Home > Products > GaAs Wafer > 10x10mm Gallium oxide substrate monocline structure

10x10mm Gallium oxide substrate monocline structure

Product Details

Place of Origin: china

Brand Name: zmsh

Certification: ROHS

Model Number: 6INCH GaAs wafer

Payment & Shipping Terms

Minimum Order Quantity: 10pcs

Price: by case

Packaging Details: PET film in 100-grade cleaning room

Delivery Time: 1-4weeks

Supply Ability: 500pcs/month

Get Best Price
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P Type GaAs Wafers

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N Type GaAs Wafers

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Gallium Arsenide Wafer 2inch

Material:
MONOcrystal GaAs
Industry:
Semicondutor Wafer For Ld Or Led
Application:
Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates
Method:
CZ
Size:
2inch~6inch
Thickness:
0.425mm
Surface:
Cmp/etched
Doped:
Si-doped
MOQ:
10PCS
Grade:
Research Grade/dummy Grade
Material:
MONOcrystal GaAs
Industry:
Semicondutor Wafer For Ld Or Led
Application:
Semiconductor Substrate, Led Chip, Optical Glass Window,device Substrates
Method:
CZ
Size:
2inch~6inch
Thickness:
0.425mm
Surface:
Cmp/etched
Doped:
Si-doped
MOQ:
10PCS
Grade:
Research Grade/dummy Grade
10x10mm Gallium oxide substrate monocline structure

10x10mm Gallium oxide substrate monocline structure


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The steady-state gallium oxide crystal has a monoclinal structure with two cleavage planes (100) and (001). As far as the growth process is concerned, the growth process of the (100) crystalline phase gallium oxide crystal is easier to grow, while the growth process of the (001) crystal requires extremely high process control. Under the same processing conditions, the surface quality and yield of the (001) surface are better, and the (100) surface is easily cleaved and broken, making it difficult to achieve efficient and high surface quality processing. From the application side, the main (001) crystal phase gallium oxide is more suitable for the use of power semiconductor devices, so it is difficult to control the growth of the main (001) crystal phase gallium oxide crystal, but it has great industrial value, or it does not have the growth process of large size main (001) crystal phase gallium oxide, gallium oxide market application side will be extremely difficult to promote the process.

 

Application:Wide bandgap semiconductor materials


Before introducing gallium oxide (Ga2O3), let me introduce another term: wide band gap semiconductor materials.

Band gap width is an important characteristic parameter of semiconductor. According to the different band structure of semiconductor materials, semiconductor materials can be divided into two types: wide band gap and narrow band gap. If the band gap width of the semiconductor material is less than 2.3eV, it is called a narrow band gap semiconductor. If the band gap width of the semiconductor material is greater than or equal to 2.3eV, it is called a wide-band gap semiconductor. The larger the bandgap width of a semiconductor material, the greater the energy required for its electrons to transition to the conduction band, and thus the higher the temperature and voltage the material can withstand, that is, the less easy it is to become a conductor.

Wide band gap semiconductor materials are very suitable for the production of radiation resistance, high frequency, high power and high-density integrated electronic devices, which have good radiation resistance and chemical stability, high saturated electron drift speed and thermal conductivity, excellent electrical properties and other characteristics. In recent years, the rapidly developing wide band gap semiconductor materials have broad application prospects in semiconductor lighting, a new generation of mobile communication, smart grid, high-speed rail transit, new energy vehicles, consumer electronics and other fields, and are expected to become the key new materials supporting the development of information, energy, transportation, national defense and other industries. The related technology research and development of wide-gap semiconductor materials is becoming a new strategic highland in the global semiconductor industry.

 
Specification detail
 
Orientation 100 100 100
Doping UID Mg Fe
electrical parameter
1×1017~3×1018cm-3
≥1010Ω·cm
≥1010Ω·cm
arcsec
≤150 ≤150 ≤150
dislocation density <1×105 cm-2 <1×105 cm-2 <1×105 cm-2

 

 


ABOUT OUR ZMKJ

     ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
 
 
 
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
 
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and  by FOB
 and pay condition of 50% deposit,50% before delivery.
 
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
 

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.