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| Place of Origin | china |
| Brand Name | zmsh |
| Certification | ROHS |
| Model Number | 6INCH GaAs wafer |
10x10mm Gallium oxide substrate monocline structure
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The steady-state gallium oxide crystal has a monoclinal structure with two cleavage planes (100) and (001). As far as the growth process is concerned, the growth process of the (100) crystalline phase gallium oxide crystal is easier to grow, while the growth process of the (001) crystal requires extremely high process control. Under the same processing conditions, the surface quality and yield of the (001) surface are better, and the (100) surface is easily cleaved and broken, making it difficult to achieve efficient and high surface quality processing. From the application side, the main (001) crystal phase gallium oxide is more suitable for the use of power semiconductor devices, so it is difficult to control the growth of the main (001) crystal phase gallium oxide crystal, but it has great industrial value, or it does not have the growth process of large size main (001) crystal phase gallium oxide, gallium oxide market application side will be extremely difficult to promote the process.
Before introducing gallium oxide (Ga2O3), let me introduce another term: wide band gap semiconductor materials.
Band gap width is an important characteristic parameter of semiconductor. According to the different band structure of semiconductor materials, semiconductor materials can be divided into two types: wide band gap and narrow band gap. If the band gap width of the semiconductor material is less than 2.3eV, it is called a narrow band gap semiconductor. If the band gap width of the semiconductor material is greater than or equal to 2.3eV, it is called a wide-band gap semiconductor. The larger the bandgap width of a semiconductor material, the greater the energy required for its electrons to transition to the conduction band, and thus the higher the temperature and voltage the material can withstand, that is, the less easy it is to become a conductor.
Wide band gap semiconductor materials are very suitable for the production of radiation resistance, high frequency, high power and high-density integrated electronic devices, which have good radiation resistance and chemical stability, high saturated electron drift speed and thermal conductivity, excellent electrical properties and other characteristics. In recent years, the rapidly developing wide band gap semiconductor materials have broad application prospects in semiconductor lighting, a new generation of mobile communication, smart grid, high-speed rail transit, new energy vehicles, consumer electronics and other fields, and are expected to become the key new materials supporting the development of information, energy, transportation, national defense and other industries. The related technology research and development of wide-gap semiconductor materials is becoming a new strategic highland in the global semiconductor industry.
| Orientation | 100 | 100 | 100 |
| Doping | UID | Mg | Fe |
| electrical parameter |
1×1017~3×1018cm-3
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≥1010Ω·cm
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≥1010Ω·cm
|
|
arcsec
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≤150 | ≤150 | ≤150 |
| dislocation density | ＜1×105 cm-2 | ＜1×105 cm-2 | ＜1×105 cm-2 |
ABOUT OUR ZMKJ
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.
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