4inch SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350m Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial ... Read More
Abstract of LNOI Wafers 3inch/4inch/6inch/8inch Lithium Niobate Thin Film LNOI Wafers with Optical Loss 90% yield, and is collaborating with global research institutions to develop 8-inch LNOI and heterogeneous ... Read More
SiC seed wafer 6inch 8inch 4H-N type production grade Dummy grade for SiC wafer growth 6inch 8inch SiC seed wafer's abstract SiC seed wafers play a pivotal role in silicon carbide (SiC) crystal growth processes... Read More
Overview of Diamond Wire Single-Line Cutting Machine Diamond Wire Single-Line Cutting Machine for SiC/Sapphire/Quartz/Ceramic Material The diamond wire single-line cutting machine is a high-precision processing ... Read More
SiC Backing Plate / Support Plate Key Summary High-Temperature Resistant SiC Backing Plate/Support Plate for Wafer Carriers Silicon Carbide (SiC) Backing Plates / Support Plates are high-performance ceramic ... Read More
Wafer Orientation Instrument Equipment Overview XRD-Based Wafer Orientation Instrument for High-Precision Cutting Angle Determination A wafer orientation instrument is a high-precision device based on X-ray ... Read More