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silicon carbide substrate

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4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
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SICOI Wafers Overview 4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon SICOI (Silicon Carbide on Insulator) wafers represent a high-performance semiconductor substrate ... Read More

2025-08-14 11:19:19

Free Standing Gallium Nitride Wafer Semiconductor GaN Substrates
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates About GaN-on-GaN ... Read More

2022-08-02 11:43:29

GaN-ON-GaN Micro LED EPI Wafers Free Standing GaN Substrates 2 Inch
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates About GaN-on-GaN Feature Introduce Vertical GaN power devices have ... Read More

2023-07-13 14:46:03

2 Inch DSP Single Crystal Gallium Nitride Wafer Free Standing GaN Substrates
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch DSP SSP GaN-ON-GaN Blue HEMT wafers on free-standing GaN substrates About GaN-on-GaN Feature Introduce Vertical GaN power ... Read More

2022-04-14 16:25:11

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices
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Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350m For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and ... Read More

2024-09-24 17:30:38

SiC Seed Wafer 8inch Thickness 600±50um 4H Type Production Grade For Silicon Carbide Crystal Growth
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SiC seed wafer 8inch thickness 60050um 4H type production grade for Silicon carbide crystal growth SiC seed wafer's abstract SiC seed wafers are critical in the production of high-quality silicon carbide (SiC) ... Read More

2024-10-11 10:35:00

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade
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Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 m Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More

2025-01-24 15:29:41

10x15mm 100 Orientation Gallium Oxide GaAS Substrate 100 Orientation With Fe Doped
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10x15mm 100 Orientation Gallium oxide GaO substrate 100 orientation with Fe doped 10x15mm Gallium oxide GaO substrate 100 orientation 10x10mm Gallium oxide substrate monocline structure ------------------------... Read More

2023-07-19 17:40:37

4inch Si wafer Dia 100mm Thickness 350um Orientation <100> DSP SSP Customized Silicon Wafers N type P type
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Si wafer, Silicon Wafer, Si Substrate, Silicon Substrate, , , , 1inch Si wafer, 2inch Si wafer, 3inch Si wafer, 4inch Si wafer, Si monocrystalline substrate, Silicon monocrystalline wafer Character of the Si ... Read More

2024-08-23 16:26:16

Dummy Grade 6Inch Sic Substrate Wafer Dia150mm 4H-N 500mm Thickness
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6inch sic substrates ,6inch sic wafers, sic crystal ingots , sic crystal block ,sic semiconductor substrates,Silicon Carbide Wafer 6 inch diameter, Silicon Carbide (SiC) Substrate Specification Grade Zero MPD ... Read More

2022-06-23 10:12:13

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