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10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips
  • 10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips
  • 10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips
  • 10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips
  • 10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips

10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips

Place of Origin CHINA
Brand Name ZMSH
Certification rohs
Model Number SIC010
Product Details
Compressive Strength:
Si-face CMP; C-face Mp;
Resistivity:; Or >;
SiC Monocrystal
Surface Roughness:
Breakdown Voltage:
5.5 MV/cm
Thermal Conductivity:
4.9 W/mK
0.5x0.5mm; 1x1mm; 5x5mm;10x10mm;
High Light: 

Monocrystal SiC Substrate


Silicon Carbide SiC Wafer


10x10mm Sic Chips

Product Description

Product Description:

From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, next-generation displays, and other fields, with huge market potential.

In terms of application, it is divided into low voltage, medium voltage, and high voltage fields:

Low voltage field
Mainly targeting some consumer electronics, such as PFC and power supply; For example, Xiaomi and Huawei have launched fast chargers using gallium nitride devices.

Medium voltage field
Mainly in automotive electronics and rail transit and power grid systems with a voltage of over 3300V. For example, Tesla was the earliest automotive manufacturer to use silicon carbide devices, using the model 3.
In the field of medium and low voltage, silicon carbide has very mature diodes and MOSFET products that are being promoted and applied in the market.

High voltage field
Silicon carbide has unique advantages. But so far, there has not been a mature product launched in the high-voltage field, and the world is in the stage of research and development.
Electric vehicles are the best application scenario for silicon carbide. Toyota's electric drive module (the core component of electric vehicles) reduces the volume of silicon carbide devices by 50% or more compared to silicon based IGBTs, and the energy density is also much higher than that of silicon based IGBTs. This is also the reason why many manufacturers tend to use silicon carbide, which can optimize the layout of components in the car and save more space.



Silicon Carbide is an incredibly hard and versatile substrate, offering numerous advantages over traditional silicon substrates.

One of the major advantages of silicon carbide is its hardness. Thismaterial can transfer heat from one point to another well, allowing it to improve its electrical conductivity and enable miniaturization in many applications. Silicon carbide wafers also have a low coefficient for thermal expansion, meaning they do not change significantly in size or shape as they are heated or cooled. In addition, silicon carbide substrates are highly resistant to thermal shock, and can change temperatures rapidly without breaking or cracking.

Silicon carbide is a very durable material which does not react with acids, alkalis or molten salts at temperatures up to 800°C. It is also strong enough to safely operate at temperatures over 1600°C, making it suitable for high temperature applications.


Technical Parameters:

4H-SiC* and 6H-SiC** have various sizes ranging from 50.8mm (2") to 200mm (8 inch). With respect to type and dopant, they are both of the N/Nitrogen and intrinsic/ HPSI type. 4H-SiC* has a resistivity range of 0.015 - 0.028 ohm*cm whereas 6H-SiC** has a much larger resistivity of >1E7 ohm*cm. The thickness of both ranges from 250um to 15,000um (15mm) and they both have a single/double side polished surface finish. Stacking sequence of 4H-SiC* follows ABCB while that of 6H-SiC** follows ABCACB. The dielectric constant of 4H-SiC* is 9.6 and that of 6H-SiC** is 9.66. As for electron mobility, 4H-SiC* has a score of 800 cm2/V*S while 6H-SiC** is slightly lower at 400 cm2/V*S. Last but not least, their densities are the same at 3.21 · 103 kg/m3.



ZMSH SIC010 SiC Substrate is a high-precision custom size plates for various applications. It is made of silicon carbide (SiC) material, with a dielectric constant of 9.7, an extremely low surface roughness of Ra<0.5nm, and a high breakdown voltage of 5.5 MV/cm. This product has an incredibly high compressive strength of >1000MPa, making it ideal for uses with extreme precision and demanding conditions. It is perfect for laser cutting, as it can maintain a high level of accuracy and quality. It is certified RoHS compliant and is available in minimum order quantities of 10 pieces. The price is determined on a case-by-case basis, with custom plastic boxes for packaging. Delivery time is 30 days and payment is accepted via T/T. ZMSH is able to supply up to 1000 pieces per month.


10x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips 010x10mm 5x5mm SiC Substrate Resistivity 0.015-0.028ohm.Cm Or >1E7ohm.Cm Sic Chips 1Customization:

Customized SiC Substrate

Brand Name: ZMSH
Model Number: SIC010
Place of Origin: CHINA
Certification: ROHS
Minimum Order Quantity: 10PC
Price: By case
Packaging Details: Customized plastic box
Delivery Time: In 30 days
Payment Terms: T/T
Supply Ability: 1000PC/month
Dopant: N/A
Material: SiC Monocrystal
Surface Hardness: HV0.3 > 2500
Tensile Strength: > 400MPa
Surface: Si-face CMP; C-face MP


Silicon Carbide Wafers, 4H-N SIC Wafers, Customized Size SiC Chips


Support and Services:

SiC Substrate Technical Support and Services

We are committed to providing our customers with the best technical support and services for SiC Substrate products. Our knowledgeable staff is always available to answer questions and provide guidance. We strive to ensure that our customers have access to the most up-to-date information and resources to assist them in making informed decisions. We also provide a variety of services, such as design assistance, prototyping, customization, and more.

Our team of experts is always available to provide technical support and advice. We understand the importance of product performance and reliability and will work with our customers to ensure that their needs are met. We also provide training and education on the use of SiC Substrate products.

We are dedicated to providing the highest level of service and support for our customers. Our goal is to make sure that our customers have a positive experience and are satisfied with our products and services.

Contact Us at Any Time

Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
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