4 Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer Product Description: The SiC Substrate also has a surface roughness of Ra400MPa, making it highly durable and able to withstand high ... Read More
Product Description: 4Inch Sic Silicon Carbide Wafer 6H-P Type Thickness 350m Zero grade Prime grade Dummy grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal ... Read More
Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350m For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and ... Read More
Product Description: Sic silicon carbide wafer 4H-P type on axis 0Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P... Read More
4' 200nm AlScN Template On Silicon SSP DSP Epitaxial Substrates for LED Devices Features: Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on a silicon substrate. This ... Read More
Product Description: 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350m Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More
Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 m Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More
Product Description: Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with ... Read More