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The SiC Ingot Growing Furnace Uses PVT, Lely TSSG And LPE Methods To Grow Large Size Crystals Of 4 Inch, 6 Inch And 8 Inch
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Introduction of SiC ingot growing furnace The SiC ingot growing furnace uses PVT, Lely, TSSG and LPE methods to grow large size crystals of 4 inch, 6 inch and 8 inch SiC ingot growth equipment focuses on ... Read More

2025-02-21 16:42:38

High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate
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6inch sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into slices, and polishing, the SiC ... Read More

2023-05-11 14:23:27

4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates
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4 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates Description of HP 4H-semi SIC: 1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are very ideal semiconductor materials... Read More

2023-11-27 09:47:06

CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
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CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are single-crystal silicon carbide wafers with epitaxial layers ... Read More

2024-05-07 18:17:32

4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime Grade Dummy Grade
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4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime Grade Dummy Grade Product Description 4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime Grade Dummy ... Read More

2025-04-29 14:01:02

4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade
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3C SiC wafer, 3C Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, Prime Grade, Dummy Grade, 4inch 3C N-type SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 3C-N 4H-N, 4H-SEMI, 6H-N, HPSI 4H-P ... Read More

2024-08-27 09:58:42

6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices
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SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate, Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, ... Read More

2024-09-24 17:30:38

2inch/4inch/6inch/5.05.0 Mm/10.010.0 Mm Sic Silicon Carbide Substrate Type 3C-N On Axis: < 111 > ± 0.5° Production Grade Dummy Grade
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Product Description: 2inch/4inch/6inch/5.0*5.0 mm/10.0*10.0 mm Sic Silicon Carbide Substrate Type 3C-N On axis: < 111 > 0.5 Production Grade Dummy Grade Type 3C-N silicon carbide (SiC) substrate is a semiconduc... Read More

2025-02-21 16:42:38

4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics
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SiC Substrate 1010mm Product Overview 4H-N Type SiC Substrate 1010mm Small Wafer Customizable Shape & Dimensions The SiC 1010 small wafer is a high-performance semiconductor product developed based on third... Read More

2025-07-31 09:09:08

DUMMY Prime grade 6inch Silicon carbide sic Wafer 0.5mm 0.35mm DSP 4H-N/semi Thickness substrates
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silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 c=10.053 a=3.073 c=15.117 ... Read More

2020-07-17 15:01:02

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