Product Description: Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward Zero Grade For temperature sensor 4H-P silicon carbide (SiC) substrate is a high performance semiconductor material with a ... Read More
12inch Sic wafer description 12inch Sic wafer silicon carbide 4H-N type production grade dummy grade large size A 12-inch silicon carbide (SiC) substrate is a large-size substrate material used to manufacture ... Read More
Product Description: 12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication The 12inch silicon carbide substrate is an important innovation ... Read More
2/4/6/8inch Sic Silicon Carbide Substrate 4H 6H 3C Type Support Customize Semiconductor Industry Multiple Sizes Product Description Silicon carbide substrate is a compound semiconductor single crystal material ... Read More
6inch 8inch Wafer Carrier Semi Standard FOSB POD FOUP RSP 25-Pieces 1-Piece Practical Application Case Product introduction The wafer shipping box protects, tranloads, and stores 6/8inch wafers to provide ... Read More
8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization Product introduction SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and ... Read More
Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high... Read More
Product Description: Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, ... Read More
Product Description: 2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade Silicon carbide (SiC), commonly referred to as silicon carbide, is a compound formed ... Read More
Product Description: 6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications and radar systems Diameter 150mm Prime Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material ... Read More