SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-SEMI SiC use SIC ... Read More
SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type Character of 4H-N SiC - use ... Read More
Product Description: 2inch 4inch 6inch Sic silicon carbide substrate 6H High P-doped Type Off axis: 4.0toward Prime Grade Dummy Grade Silicon carbide (SiC) is a compound semiconductor material composed of ... Read More
Product Description: Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0toward Zero Grade For temperature sensor 4H-P silicon carbide (SiC) substrate is a high performance semiconductor material with a ... Read More
Product Description: Sic silicon carbide wafer 4H-P type on axis 0Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P... Read More
Product Description: 2inch/4inch/6inch Sic Silicon Carbide Substrate 4H-P Type Off axis: 2.0 toward Production Grade Silicon carbide substrate 4H-P type refers to P-type (Positive-type) silicon carbide material ... Read More
Product Description: 2inch/4inch/6inch/5.0*5.0 mm/10.0*10.0 mm Sic Silicon Carbide Substrate Type 3C-N On axis: < 111 > 0.5 Production Grade Dummy Grade Type 3C-N silicon carbide (SiC) substrate is a semiconduc... Read More
Product Description: 2Inch Sic Silicon Carbide Substrate 6H Low Resistance High P-doped Type Diameter 50.8mm 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal ... Read More
CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are single-crystal silicon carbide wafers with epitaxial layers ... Read More