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buy SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot online manufacturer

SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot

SiC Ingot, Silicon Carbide Ingot, SiC raw Ingot, Silicon Carbide raw Ingot, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC Ingot - ... Read More
2024-09-10 15:33:01
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4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type Features of 4H-N SiC - Use ... Read More
2024-08-15 09:06:10
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SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC - support ... Read More
2025-03-19 22:46:22
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6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type Character of 4H-N SiC - use ... Read More
2025-05-16 16:00:35
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The SiC Ingot Growing Furnace Uses PVT, Lely TSSG And LPE Methods To Grow Large Size Crystals Of 4 Inch, 6 Inch And 8 Inch

Introduction of SiC ingot growing furnace The SiC ingot growing furnace uses PVT, Lely, TSSG and LPE methods to grow large size crystals of 4 inch, 6 inch and 8 inch SiC ingot growth equipment focuses on ... Read More
2025-02-21 16:42:38
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4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade

4inch SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350m Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial ... Read More
2025-07-01 13:16:40
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2Inch Sic Substrate 6H-N Type Thickness 350um 650um Sic Wafer

The 6H n-type Silicon Carbide (SiC) single-crystal substrate is an essential semiconductor material extensively used in high-power, high-frequency, and high-temperature electronic applications. Renowned for its ... Read More
2024-08-08 13:35:02
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Product Description: From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grids, photovoltaic ... Read More
2023-08-24 22:50:31
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Product Description: From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grids, photovoltaic ... Read More
2023-08-24 22:49:05
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Product Description: From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grids, photovoltaic ... Read More
2023-08-24 22:46:35
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