12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications Product introduction SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and ... Read More
12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large ... Read More
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials About SiC wafer Silicon carbide wafer is a kind of wide band gap semiconductor ... Read More
Product Description: Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and ... Read More
SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC - support ... Read More
Product Description: 2inch/4inch/6inch Sic Silicon Carbide Substrate 4H-P Type Off axis: 2.0° toward Production Grade Silicon carbide substrate 4H-P type refers to P-type (Positive-type) silicon carbide ... Read More
Product Description: 2inch/4inch/6inch/5.0*5.0 mm/10.0*10.0 mm Sic Silicon Carbide Substrate Type 3C-N On axis: < 111 > ± 0.5° Production Grade Dummy Grade Type 3C-N silicon carbide (SiC) substrate is a ... Read More
Product Description: 2inch 4inch 6inch Sic silicon carbide substrate 6H High P-doped Type Off axis: 4.0°toward Prime Grade Dummy Grade Silicon carbide (SiC) is a compound semiconductor material composed of ... Read More
Product Description: Silicon carbide wafer Sic 6H-P type Off axis: 2.0° toward Production Grade Research Grade Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal ... Read More
Product Description: Sic Silicon carbide substrate 6H-P type on axis 0° Mohs Hardness 9.2 for laser device 6H-P type silicon carbide substrate is a semiconductor material grown by a special process. Its crystal ... Read More