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SiC Substrate

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China 12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications factory

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications

12inch 300mm SiC Silicon Carbide Wafer 4H-N Type Dummy Prime Research Grade Multiple Applications Product introduction SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and ... Read More
2025-03-21 11:03:41
China 12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic factory

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large ... Read More
2025-03-21 11:00:23
China 2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials factory

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials About SiC wafer Silicon carbide wafer is a kind of wide band gap semiconductor ... Read More
2025-03-21 10:57:34
China Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices factory

Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Product Description: Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and ... Read More
2025-03-19 22:46:23
China 2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um SiC wafer Prime Grade Dummy Grade factory

2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um SiC wafer Prime Grade Dummy Grade

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC - support ... Read More
2025-03-19 22:46:22
China 2inch / 4inch / 6inch Sic Silicon Carbide Substrate 4H-P Type Off Axis 2.0° Toward Production Grade factory

2inch / 4inch / 6inch Sic Silicon Carbide Substrate 4H-P Type Off Axis 2.0° Toward Production Grade

Product Description: 2inch/4inch/6inch Sic Silicon Carbide Substrate 4H-P Type Off axis: 2.0° toward Production Grade Silicon carbide substrate 4H-P type refers to P-type (Positive-type) silicon carbide ... Read More
2025-02-21 16:43:49
China 2inch/4inch/6inch/5.0*5.0 Mm/10.0*10.0 Mm Sic Silicon Carbide Substrate Type 3C-N On Axis: < 111 > ± 0.5° Production Grade Dummy Grade factory

2inch/4inch/6inch/5.0*5.0 Mm/10.0*10.0 Mm Sic Silicon Carbide Substrate Type 3C-N On Axis: < 111 > ± 0.5° Production Grade Dummy Grade

Product Description: 2inch/4inch/6inch/5.0*5.0 mm/10.0*10.0 mm Sic Silicon Carbide Substrate Type 3C-N On axis: < 111 > ± 0.5° Production Grade Dummy Grade Type 3C-N silicon carbide (SiC) substrate is a ... Read More
2025-02-21 16:42:38
China 2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade factory

2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade

Product Description: 2inch 4inch 6inch Sic silicon carbide substrate 6H High P-doped Type Off axis: 4.0°toward Prime Grade Dummy Grade Silicon carbide (SiC) is a compound semiconductor material composed of ... Read More
2025-02-21 16:42:38
China Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade factory

Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

Product Description: Silicon carbide wafer Sic 6H-P type Off axis: 2.0° toward Production Grade Research Grade Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal ... Read More
2025-02-21 16:42:38
China Sic Silicon Carbide Substrate 6H-P Type On Axis 0° Mohs Hardness 9.2 For Laser Device factory

Sic Silicon Carbide Substrate 6H-P Type On Axis 0° Mohs Hardness 9.2 For Laser Device

Product Description: Sic Silicon carbide substrate 6H-P type on axis 0° Mohs Hardness 9.2 for laser device 6H-P type silicon carbide substrate is a semiconductor material grown by a special process. Its crystal ... Read More
2025-02-21 16:42:38
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